Photoluminescence of Si nanocrystal memory devices obtained by ion beam synthesis

2005 ◽  
Vol 87 (25) ◽  
pp. 251911 ◽  
Author(s):  
Marzia Carrada ◽  
Anja Wellner ◽  
Vincent Paillard ◽  
Caroline Bonafos ◽  
Hubert Coffin ◽  
...  
Keyword(s):  
Ion Beam ◽  
Memory Devices ◽  
Si Nanocrystal ◽  
Ion Beam Synthesis ◽  
Nanocrystal Memory

Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

2003 ◽  
Vol 67-68 ◽  
pp. 629-634 ◽  
Author(s):  
P. Normand ◽  
E. Kapetanakis ◽  
P. Dimitrakis ◽  
D. Skarlatos ◽  
D. Tsoukalas ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Charge Storage ◽  
Memory Devices ◽  
Annealing Conditions ◽  
Si Nanocrystal ◽  
Ion Beam Synthesis ◽  
Nanocrystal Memory

Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis

2004 ◽  
Vol 48 (9) ◽  
pp. 1511-1517 ◽  
Author(s):  
P Dimitrakis ◽  
E Kapetanakis ◽  
D Tsoukalas ◽  
D Skarlatos ◽  
C Bonafos ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Memory Devices ◽  
Silicon Nanocrystal ◽  
Ion Beam Synthesis ◽  
Nanocrystal Memory

Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices

2012 ◽  
Vol 33 (12) ◽  
pp. 1705-1707 ◽  
Author(s):  
Dandan Jiang ◽  
Manhong Zhang ◽  
Zongliang Huo ◽  
Zhong Sun ◽  
Yong Wang ◽  
...  
Keyword(s):  
Interface State ◽  
Memory Devices ◽  
Si Nanocrystal ◽  
State Generation ◽  
Nanocrystal Memory

Si NANOCRYSTAL MOS MEMORY OBTAINED BY LOW-ENERGY ION BEAM SYNTHESIS

2001 ◽  
Author(s):  
E. KAPETANAKIS ◽  
P. NORMAND ◽  
D. TSOUKALAS ◽  
K. BELTSIOS ◽  
S. ZHANG ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Si Nanocrystal ◽  
Ion Beam Synthesis

Analysis of Cycling Induced Interface Degradation in Si Nanocrystal Memory Devices

2012 ◽  
Vol 45 (3) ◽  
pp. 311-316 ◽  
Author(s):  
D. Jiang ◽  
M. Zhang ◽  
Z. Huo ◽  
Z. Sun ◽  
Y. Wang ◽  
...  
Keyword(s):  
Memory Devices ◽  
Si Nanocrystal ◽  
Nanocrystal Memory

A study of cycling induced degradation mechanisms in Si nanocrystal memory devices

2011 ◽  
Vol 22 (25) ◽  
pp. 254009 ◽  
Author(s):  
Dandan Jiang ◽  
Manhong Zhang ◽  
Zongliang Huo ◽  
Qin Wang ◽  
Jing Liu ◽  
...  
Keyword(s):  
Memory Devices ◽  
Degradation Mechanisms ◽  
Si Nanocrystal ◽  
Nanocrystal Memory

Effect of hydrogen ion beam treatment on Si nanocrystal/SiO2 superlattice-based memory devices

2016 ◽  
Vol 367 ◽  
pp. 134-139 ◽  
Author(s):  
Sheng-Wen Fu ◽  
Hui-Ju Chen ◽  
Hsuan-Ta Wu ◽  
Bing-Ru Chuang ◽  
Chuan-Feng Shih
Keyword(s):  
Ion Beam ◽  
Hydrogen Ion ◽  
Memory Devices ◽  
Si Nanocrystal ◽  
Ion Beam Treatment

Si Nanocrystal Memory Devices Self-Assembled by In Situ Rapid Thermal Annealing of Ultrathin a-Si on SiO[sub 2]

2007 ◽  
Vol 10 (10) ◽  
pp. H302 ◽  
Author(s):  
Jian-Hao Chen ◽  
Tan-Fu Lei ◽  
Dolf Landheer ◽  
Xiaohua Wu ◽  
Jian Liu ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Memory Devices ◽  
Si Nanocrystal ◽  
Self Assembled ◽  
Nanocrystal Memory
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