Analysis of Cycling Induced Interface Degradation in Si Nanocrystal Memory Devices

2012 ◽  
Vol 45 (3) ◽  
pp. 311-316 ◽  
Author(s):  
D. Jiang ◽  
M. Zhang ◽  
Z. Huo ◽  
Z. Sun ◽  
Y. Wang ◽  
...  
Keyword(s):  
Memory Devices ◽  
Si Nanocrystal ◽  
Nanocrystal Memory

Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices

2012 ◽  
Vol 33 (12) ◽  
pp. 1705-1707 ◽  
Author(s):  
Dandan Jiang ◽  
Manhong Zhang ◽  
Zongliang Huo ◽  
Zhong Sun ◽  
Yong Wang ◽  
...  
Keyword(s):  
Interface State ◽  
Memory Devices ◽  
Si Nanocrystal ◽  
State Generation ◽  
Nanocrystal Memory

Photoluminescence of Si nanocrystal memory devices obtained by ion beam synthesis

2005 ◽  
Vol 87 (25) ◽  
pp. 251911 ◽  
Author(s):  
Marzia Carrada ◽  
Anja Wellner ◽  
Vincent Paillard ◽  
Caroline Bonafos ◽  
Hubert Coffin ◽  
...  
Keyword(s):  
Ion Beam ◽  
Memory Devices ◽  
Si Nanocrystal ◽  
Ion Beam Synthesis ◽  
Nanocrystal Memory

A study of cycling induced degradation mechanisms in Si nanocrystal memory devices

2011 ◽  
Vol 22 (25) ◽  
pp. 254009 ◽  
Author(s):  
Dandan Jiang ◽  
Manhong Zhang ◽  
Zongliang Huo ◽  
Qin Wang ◽  
Jing Liu ◽  
...  
Keyword(s):  
Memory Devices ◽  
Degradation Mechanisms ◽  
Si Nanocrystal ◽  
Nanocrystal Memory

Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

2003 ◽  
Vol 67-68 ◽  
pp. 629-634 ◽  
Author(s):  
P. Normand ◽  
E. Kapetanakis ◽  
P. Dimitrakis ◽  
D. Skarlatos ◽  
D. Tsoukalas ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Charge Storage ◽  
Memory Devices ◽  
Annealing Conditions ◽  
Si Nanocrystal ◽  
Ion Beam Synthesis ◽  
Nanocrystal Memory

Si Nanocrystal Memory Devices Self-Assembled by In Situ Rapid Thermal Annealing of Ultrathin a-Si on SiO[sub 2]

2007 ◽  
Vol 10 (10) ◽  
pp. H302 ◽  
Author(s):  
Jian-Hao Chen ◽  
Tan-Fu Lei ◽  
Dolf Landheer ◽  
Xiaohua Wu ◽  
Jian Liu ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Memory Devices ◽  
Si Nanocrystal ◽  
Self Assembled ◽  
Nanocrystal Memory

A novel junction-assisted programming scheme for Si-nanocrystal memory devices with improved performance

2011 ◽  
Vol 26 (11) ◽  
pp. 115008 ◽  
Author(s):  
Dandan Jiang ◽  
Zongliang Huo ◽  
Manhong Zhang ◽  
Lin Jin ◽  
Jie Bai ◽  
...  
Keyword(s):  
Memory Devices ◽  
Si Nanocrystal ◽  
Improved Performance ◽  
Nanocrystal Memory

Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 447-451 ◽  
Author(s):  
Ilgweon Kim ◽  
Sangyeon Han ◽  
Kwangseok Han ◽  
Jongho Lee ◽  
Hyungcheol Shin
Keyword(s):  
Room Temperature ◽  
Memory Cell ◽  
Single Electron ◽  
Si Nanocrystal ◽  
Nanocrystal Memory ◽  
Electron Effects

Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices

2007 ◽  
Author(s):  
S. Lombardo ◽  
C. Gerardi ◽  
L. Breuil ◽  
C. Jahan ◽  
L. Perniola ◽  
...  
Keyword(s):  
Memory Devices ◽  
Nanocrystal Memory
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