Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis

2002 ◽  
Vol 80 (15) ◽  
pp. 2794-2796 ◽  
Author(s):  
E. Kapetanakis ◽  
P. Normand ◽  
D. Tsoukalas ◽  
K. Beltsios
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Low Energy ◽  
Single Electron ◽  
Large Area ◽  
Ion Beam Synthesis ◽  
Nanocrystal Memory

Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

2003 ◽  
Vol 67-68 ◽  
pp. 629-634 ◽  
Author(s):  
P. Normand ◽  
E. Kapetanakis ◽  
P. Dimitrakis ◽  
D. Skarlatos ◽  
D. Tsoukalas ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Charge Storage ◽  
Memory Devices ◽  
Annealing Conditions ◽  
Si Nanocrystal ◽  
Ion Beam Synthesis ◽  
Nanocrystal Memory

Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis

2004 ◽  
Vol 48 (9) ◽  
pp. 1511-1517 ◽  
Author(s):  
P Dimitrakis ◽  
E Kapetanakis ◽  
D Tsoukalas ◽  
D Skarlatos ◽  
C Bonafos ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Memory Devices ◽  
Silicon Nanocrystal ◽  
Ion Beam Synthesis ◽  
Nanocrystal Memory

Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 447-451 ◽  
Author(s):  
Ilgweon Kim ◽  
Sangyeon Han ◽  
Kwangseok Han ◽  
Jongho Lee ◽  
Hyungcheol Shin
Keyword(s):  
Room Temperature ◽  
Memory Cell ◽  
Single Electron ◽  
Si Nanocrystal ◽  
Nanocrystal Memory ◽  
Electron Effects

Single electron charging and discharging phenomena at room temperature in a silicon nanocrystal memory

2003 ◽  
Vol 47 (10) ◽  
pp. 1645-1649 ◽  
Author(s):  
G. Molas ◽  
B. De Salvo ◽  
D. Mariolle ◽  
G. Ghibaudo ◽  
A. Toffoli ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Electron ◽  
Silicon Nanocrystal ◽  
Nanocrystal Memory

Ion Beam Synthesis of Silicon Carbide

2005 ◽  
Vol 107 ◽  
pp. 51-54 ◽  
Author(s):  
S. Intarasiri ◽  
Anders Hallén ◽  
A. Razpet ◽  
Somsorn Singkarat ◽  
G. Possnert
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Vacuum Furnace ◽  
Carbon Ions ◽  
Elastic Recoil ◽  
Near Surface ◽  
Ion Beam Synthesis

Formation and crystallization of a thin near-surface layer of silicon carbide on a silicon substrate, created by ion-beam synthesis (IBS), are discussed. 80 and 40 keV carbon ions were implanted into a (1 0 0) high-purity p-type silicon substrate at room temperature and 400 oC, respectively, using doses in excess of 1017 ions/cm2. Elastic recoil detection analysis (ERDA) technique, developed for routine atomic depth profiling at the Angstrom laboratory, Uppsala University, Sweden, was used to investigate the depth distributions of implanted-ions. Infrared transmittance measurement was used as an indication of SiC in the implanted Si substrate. For the samples implanted at high temperature, the results show the existence of a peak at 797 cm-1, indicating the presence of β-SiC, already directly formed during the implantation without postimplantation annealing. While for the samples implanted at room temperature, starting with the band of amorphous Si-C network, the crystalline SiC appears at the annealing temperature as low as 900 oC. In both cases, during further annealing in vacuum, the peak grows in height and narrows in width (according to the measured FWHM) with increasing annealing temperature, indicating a further growth of the SiC layer. However, for thermal annealing at 1000 oC in a vacuum furnace the SiC crystallization was not completed and crystal imperfection where still present. Complementary to IR, Raman scattering measurements were performed. Although no direct evidence of SiC vibrations were observed, the appearance and disappearance of both Si-Si and C-C related bands points out to the formation of silicon and carbon clusters in the implanted layer.

scholarly journals Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis

2003 ◽  
Vol 83 (1) ◽  
pp. 168-170 ◽  
Author(s):  
P. Normand ◽  
E. Kapetanakis ◽  
P. Dimitrakis ◽  
D. Tsoukalas ◽  
K. Beltsios ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Si Nanocrystals ◽  
Ion Beam Synthesis

Si NANOCRYSTAL MOS MEMORY OBTAINED BY LOW-ENERGY ION BEAM SYNTHESIS

2001 ◽  
Author(s):  
E. KAPETANAKIS ◽  
P. NORMAND ◽  
D. TSOUKALAS ◽  
K. BELTSIOS ◽  
S. ZHANG ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Si Nanocrystal ◽  
Ion Beam Synthesis
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