Si Nanocrystal Memory Devices Self-Assembled by In Situ Rapid Thermal Annealing of Ultrathin a-Si on SiO[sub 2]

2007 ◽  
Vol 10 (10) ◽  
pp. H302 ◽  
Author(s):  
Jian-Hao Chen ◽  
Tan-Fu Lei ◽  
Dolf Landheer ◽  
Xiaohua Wu ◽  
Jian Liu ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Memory Devices ◽  
Si Nanocrystal ◽  
Self Assembled ◽  
Nanocrystal Memory

Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices

2012 ◽  
Vol 33 (12) ◽  
pp. 1705-1707 ◽  
Author(s):  
Dandan Jiang ◽  
Manhong Zhang ◽  
Zongliang Huo ◽  
Zhong Sun ◽  
Yong Wang ◽  
...  
Keyword(s):  
Interface State ◽  
Memory Devices ◽  
Si Nanocrystal ◽  
State Generation ◽  
Nanocrystal Memory

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

2000 ◽  
Vol 208 (1-4) ◽  
pp. 791-794 ◽  
Author(s):  
Q.D Zhuang ◽  
J.M Li ◽  
X.X Wang ◽  
Y.P Zeng ◽  
Y.T Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Self Assembled

Tuning the emission profiles of various self-assembled InxGa1−xAs nanostructures by rapid thermal annealing

2009 ◽  
Vol 106 (7) ◽  
pp. 073106 ◽  
Author(s):  
Jihoon H. Lee ◽  
Zhiming M. Wang ◽  
Vitaliy G. Dorogan ◽  
Yuiry I. Mazur ◽  
Morgan E. Ware ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Self Assembled

In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure

2000 ◽  
Vol 76 (18) ◽  
pp. 2538-2540 ◽  
Author(s):  
Byung Hak Lee ◽  
Kee Sun Lee ◽  
Dong Kyun Sohn ◽  
Jeong Soo Byun ◽  
Chang Hee Han ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Tungsten Nitride ◽  
Silicon Structure ◽  
Barrier Formation

The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

1997 ◽  
Vol 18 (11) ◽  
pp. 526-528 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Chao Sung Lai ◽  
Chung Len Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing

Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing

2014 ◽  
Vol 59 (5) ◽  
pp. 711-715 ◽  
Author(s):  
E. A. Bogoyavlenskaya ◽  
V. I. Rudakov ◽  
Yu. I. Denisenko ◽  
V. V. Naumov ◽  
A. E. Rogozhin
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing
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