scholarly journals Interfacial reactions of titanium/gold ohmic contacts with Sn-doped β-Ga2O3

APL Materials ◽  
2019 ◽  
Vol 7 (2) ◽  
pp. 022524 ◽  
Author(s):  
Ming-Hsun Lee ◽  
Rebecca L. Peterson
Keyword(s):  
Ohmic Contacts ◽  
Interfacial Reactions

Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiC

2002 ◽  
Vol 389-393 ◽  
pp. 897-900 ◽  
Author(s):  
Sang Youn Han ◽  
Nam Kyun Kim ◽  
Eun Dong Kim ◽  
Jong Lam Lee
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
Interfacial Reactions

Interfacial Reactions of Nano-Structured Cu-Doped Indium Oxide/Indium Tin Oxide Ohmic Contacts to p-GaN

2010 ◽  
Vol 10 (5) ◽  
pp. 3254-3259 ◽  
Author(s):  
Young Joon Yoon ◽  
S. W. Chae ◽  
B. K. Kim ◽  
Min Joo Park ◽  
Joon Seop Kwak
Keyword(s):  
Indium Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Interfacial Reactions

Amorphous Thin Film Diffusion Barriers on GaAs and InP

1982 ◽  
Vol 18 ◽  
Author(s):  
W. T. Anderson ◽  
A. Christou ◽  
J. E. Davey
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Boundaries ◽  
Ohmic Contacts ◽  
High Temperature Stress ◽  
Diffusion Barriers ◽  
Interfacial Reactions ◽  
Amorphous Thin Films ◽  
Sputter Deposited ◽  
Si Films

Thin film amorphous W-Si and TiW-Si diffusion barriers have been studied on GaAs and InP surfaces for the purpose of establishing their reliability for ohmic contacts and Schottky barriers, particularly under high temperature stress. The amorphous films were formed by a new method in which alternate layers of tungsten or TiW and silicon were sputter deposited to a total thickness of about 1300 Å and subsequently annealed near the glass transition temperature Tg(≈ 500 °C). Electron channeling and reflection electron diffraction were used to determine the amorphous nature of the films as deposited and after 4 h anneals near Tg. The as-deposited films had interfacial amorphous regions with compositions determined by interfacial reactions during the sputtering process. As-deposited W-Si films showed a weak channeling pattern which came from the unreacted polycrystalline tungsten layers. From Auger electron spectroscopy (AES) sputter profiles, it was concluded that the amorphous regions were at the W-Si interfaces which had the required tungsten-to-silicon composition ratio. After annealing at 500 °C for 4 h, the films were completely amorphous with no marked evidence of crystallization, indicating interfacial reactions extended completely into the tungsten layers. High magnification scanning electron microscopy (by a factor of 20 000) examination of the films after annealing revealed smooth and continuous surfaces with no evidence of grain boundaries. Diffusion along grain boundaries between gold and GaAs or InP in these amorphous thin films was thus almost completely eliminated. Interdiffusion of gold in layered structures (e.g. Au/(W–Si)/GaAs) was studied by AES sputter profiling techniques. No interdiffusion of gold or GaAs was observed after 16 h anneals at 400 °C. With Au/(W-Si)/InP structures, no interdiffusion was observed after 8 h anneals at 450 °C. These results are significant improvements over those for previous polycrystalline diffusion barriers (e.g. TiPt) which degrade after 1 h at 350 °C. Based on the AES sputter profiles, the diffusion coefficients in W-Si amorphous thin films were found to be less than 3 × 10−18 cm2 s−1 at 400 °C for gold, gallium and arsenic and less than 6 × 1018 cm2 s−1 at 450 °C for gold, indium and phosphorus.

Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors

1997 ◽  
Vol 117-118 ◽  
pp. 362-372 ◽  
Author(s):  
P.H. Holloway ◽  
T.-J. Kim ◽  
J.T. Trexler ◽  
S. Miller ◽  
J.J. Fijol ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Wide Bandgap ◽  
Interfacial Reactions ◽  
Wide Bandgap Semiconductors ◽  
Bandgap Semiconductors

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

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