Total-dose radiation-induced degradation of thin film ferroelectric capacitors

1990 ◽  
Vol 37 (6) ◽  
pp. 1703-1712 ◽  
Author(s):  
J.R. Schwank ◽  
R.D. Nasby ◽  
S.L. Miller ◽  
M.S. Rodgers ◽  
P.V. Dressendorfer
2018 ◽  
Vol 15 (4) ◽  
pp. 20171236-20171236
Author(s):  
Zhiyuan Hu ◽  
Lihua Dai ◽  
Zhengxuan Zhang ◽  
Xiaoyun Li ◽  
Shichang Zou

1999 ◽  
Vol 14 (9) ◽  
pp. 836-839 ◽  
Author(s):  
Jianxia Gao ◽  
Lirong Zheng ◽  
Biping Huang ◽  
Zhitang Song ◽  
Lixin Yang ◽  
...  

Author(s):  
Joy Y. Liao ◽  
Somayyeh Rahimi ◽  
Christian Schmidt ◽  
Howard Lee Marks

Abstract X-ray imaging for both Failure Analysis and In-line Inspection has been utilized widely in the semiconductor industry, especially for surface mount device applications. During the investigation of total ionizing dose (TID) induced degradation of logic ICs with bulk FinFET technology, we observed that the degradation is mainly in the form of an increase in I/O leakage and IDDQ. Using filters during radiation was shown to impact TID. Failure Analysis was performed to localize the excessive current in both I/O leakage and IDDQ.


1983 ◽  
Vol 30 (6) ◽  
pp. 4256-4263 ◽  
Author(s):  
R. Berger ◽  
A. Shevchenko ◽  
G. J. Brucker ◽  
R. Kennerud ◽  
P. Measel ◽  
...  

2004 ◽  
Vol 72 (1-4) ◽  
pp. 332-341 ◽  
Author(s):  
J.A. Felix ◽  
J.R. Schwank ◽  
C.R. Cirba ◽  
R.D. Schrimpf ◽  
M.R. Shaneyfelt ◽  
...  

2004 ◽  
Vol 71 (3-4) ◽  
pp. 713-715 ◽  
Author(s):  
D. Bisello ◽  
A. Candelori ◽  
A. Kaminski ◽  
A. Litovchenko ◽  
E. Noah ◽  
...  

2013 ◽  
Vol 18 ◽  
pp. S179-S180 ◽  
Author(s):  
I. Alastuey ◽  
A. Noé ◽  
C. Chiaramello ◽  
S. Montemuiño ◽  
J. Pardo

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