Dependence of the interfacial capacitance on measurement regime used for investigation of thin film ferroelectric capacitors

2003 ◽  
Vol 93 (1) ◽  
pp. 736-744 ◽  
Author(s):  
L. J. Sinnamon ◽  
J. McAneney ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Film ◽  
Interfacial Capacitance ◽  
Ferroelectric Capacitors

Effect of Interfaces on the Properties of Polycrystalline Thin-Film PZT Ferroelectric Capacitors

2006 ◽  
Vol 966 ◽  
Author(s):  
Lyuba A. Delimova ◽  
Igor Grekhov ◽  
Dmitri Mashovets ◽  
Ilya Titkov ◽  
Valentin Afanasjev ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Heterogeneous Medium ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Charge Carriers ◽  
Polycrystalline Thin Film ◽  
Field Interaction ◽  
Polarization Charge ◽  
Ferroelectric Capacitors

ABSTRACTA photocurrent directed opposite to ferroelectric (FE) polarization is observed in short-circuit thin-film polycrystalline Pt/PZT/Ir structures. The direction and magnitude of photocurrent are defined by the sign and magnitude of the FE polarization. A model based on a photovoltaic effect with characteristics determined by polarization of PZT grains is proposed. The model considers the field interaction of FE polarization charge with the charge carriers in intergranular PbO channel. Thin-film FE capacitor is considered as a photosensitive heterogeneous medium, where the conduction of PbO channels along PZT grain boundaries is controlled by FE polarization.

Stresses in Pt/Pb(Zr,Ti)O3/Pt thin‐film stacks for integrated ferroelectric capacitors

1995 ◽  
Vol 78 (3) ◽  
pp. 1926-1933 ◽  
Author(s):  
G. A. C. M. Spierings ◽  
G. J. M. Dormans ◽  
W. G. J. Moors ◽  
M. J. E. Ulenaers ◽  
P. K. Larsen
Keyword(s):  
Thin Film ◽  
Ferroelectric Capacitors

Total-dose radiation-induced degradation of thin film ferroelectric capacitors

1990 ◽  
Vol 37 (6) ◽  
pp. 1703-1712 ◽  
Author(s):  
J.R. Schwank ◽  
R.D. Nasby ◽  
S.L. Miller ◽  
M.S. Rodgers ◽  
P.V. Dressendorfer
Keyword(s):  
Thin Film ◽  
Total Dose ◽  
Radiation Induced ◽  
Ferroelectric Capacitors ◽  
Dose Radiation

FERROELECTRIC THIN FILM SYSTEM IN PACKAGE DEVICES WITH INTEGRATED CAPACITORS OF 100 nF/mm2 & BREAKDOWN VOLTAGES OF 90 V

2007 ◽  
Vol 1034 ◽  
Author(s):  
Mareike Klee ◽  
Wilco Keur ◽  
Ruediger Mauczok ◽  
Aarnoud Roest ◽  
Klaus Reimann ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Ferroelectric Thin Film ◽  
High Density ◽  
Film System ◽  
Passive Components ◽  
Thin Film System ◽  
Space Saving ◽  
The World ◽  
Ferroelectric Capacitors

AbstractThin film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 and breakdown voltages of up to 90 V have been achieved. The integration of these high density capacitors with extremely high breakdown voltage is a revolution in the world of integrated passive components and has not yet been achieved in any other passive integration technology.

scholarly journals Perovskite Ferroelectric

2021 ◽  
Author(s):  
Paramjit Kour ◽  
Sudipta Kishore Pradhan
Keyword(s):  
Thin Film ◽  
Fundamental Principle ◽  
Dielectric Behavior ◽  
Ferroelectric Materials ◽  
Frequency Filter ◽  
Pyroelectric Effect ◽  
Perovskite Materials ◽  
Wide Range ◽  
Ferroelectric Hysteresis ◽  
Ferroelectric Capacitors

The spectrums of properties exhibited by ferroelectric materials are dielectric, ferroelectric, piezoelectric and pyroelectric effect. This is the makes these materials to have a wide range of useful application. Infrared detectors are used pyroelectric effect of ferroelectric materials. It is used in nonvolatile memories due to have ferroelectric hysteresis. Its piezoelectric properties make them useful for actuator, radio frequency filter, sensor, and transducer. Ferroelectric capacitors are used, their good dielectric behavior. According to the necessity of the system they are available in different form such as single crystals, ceramics, thin film, and polymer, composite. The diversity of properties ferroelectric materials always attracted the attention of engineers and researchers. Size reduction of this material from micro to nanoscale established an enormous consideration to develop nanotechnology. Its vast use of different filed imposed the in detail research in adding to the development of processing and characterization method. This chapter will put some light on some fundamental principle of ferroelectricity, the list of perovskite materials and their application.

Domain Structure of Epitaxial SrRuO3 Thin Films on (001) LaA1O3

1998 ◽  
Vol 4 (S2) ◽  
pp. 578-579
Author(s):  
J. C. Jiang ◽  
X.Q. Pan ◽  
Q. Gan ◽  
C. B. Eom
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Cross Section ◽  
Ion Milling ◽  
Plan View ◽  
Face To Face ◽  
Electrical And Magnetic Properties ◽  
Device Applications ◽  
Ferroelectric Capacitors

Epitaxial thin film of SrRuO3 is very useful in device applications, due to its important electrical and magnetic properties. For example, (Pb,Zr)TiO3 ferroelectric capacitors with SrRuO3 thin film electrodes exhibit superior fatigue and leakage characteristics. Epitaxial SrRuO3 thin films grown on different substrates, such as on (001) SrTiO3 and (001) LaA1O3, have different magnetic properties, owing to the different microstructures in the film. Microstructures in epitaxial SrRuO3 thin films grown on (001) SrTiO3 have been studied in our previously work. In this paper, microstructure of epitaxial SrRu03 thin films grown on (001) LaA103 is reported.SrRuO3 thin films on (001) LaA1O3 were deposited by 90° off-axis sputtering. For cross-section TEM studies the SrRuO3/LaA1O3 heterostructural samples were cut along the [100] direction of LaA103. The cut slides were glued face-to-face by joining the SrRu03 surfaces. Plan-view and cross-section TEM specimens were prepared by mechanical grinding, polishing and dimpling, followed by Ar-ion milling.

The Influence of Dopants on the Leakage Current in PZT Thin-Film Ferroelectric Capacitors

1995 ◽  
pp. 279-289 ◽  
Author(s):  
D. J. Wouters ◽  
G. Willems ◽  
G. Groeseneken ◽  
H. E. Maes ◽  
K. Brooks ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Pzt Thin Film ◽  
Ferroelectric Capacitors
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