The role of grain-boundary on the hydrogen-induced degradation in thin-film ferroelectric capacitors

2002 ◽  
Vol 23 (9) ◽  
pp. 517-519 ◽  
Author(s):  
Jang-Sik Lee ◽  
Seung-Ki Joo
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Ferroelectric Capacitors

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Strain-induced martensite effects on transgranular carbide precipitation in type 304 stainless steels

1991 ◽  
Vol 49 ◽  
pp. 604-605
Author(s):  
A.H. Advani ◽  
L.E. Murr ◽  
D. Matlock
Keyword(s):  
Heat Treatment ◽  
Grain Boundary ◽  
Stress Corrosion Cracking ◽  
Stainless Steels ◽  
Deformation Twin ◽  
Austenitic Stainless Steels ◽  
Carbide Precipitation ◽  
Strain Induced Martensite ◽  
Type 304

Thermomechanically induced strain is a key variable producing accelerated carbide precipitation, sensitization and stress corrosion cracking in austenitic stainless steels (SS). Recent work has indicated that higher levels of strain (above 20%) also produce transgranular (TG) carbide precipitation and corrosion simultaneous with the grain boundary phenomenon in 316 SS. Transgranular precipitates were noted to form primarily on deformation twin-fault planes and their intersections in 316 SS.Briant has indicated that TG precipitation in 316 SS is significantly different from 304 SS due to the formation of strain-induced martensite on 304 SS, though an understanding of the role of martensite on the process has not been developed. This study is concerned with evaluating the effects of strain and strain-induced martensite on TG carbide precipitation in 304 SS. The study was performed on samples of a 0.051%C-304 SS deformed to 33% followed by heat treatment at 670°C for 1 h.

Role of the Electrode Morphology, Thickness and Orientation in the Ferroelectric Performance of Epitaxial Pb(Zr,Ti)O3 Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
Cesar Guerrero ◽  
Florencio Sánchez ◽  
José Roldán ◽  
Frank Güell ◽  
María V. García-Cuenca
Keyword(s):  
Electrode Materials ◽  
Stabilized Zirconia ◽  
Large Thickness ◽  
Low Dielectric ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Ferroelectric Layer ◽  
Ferroelectric Capacitors ◽  
Lattice Matched

AbstractA comparison of pulsed laser deposited PbZr0.53Ti0.47O3 (PZT) thin film capacitors with SrRuO3 (SRO) and LaNiO3 (LNO) electrodes on (001) yttria-stabilized zirconia (YSZ) and lattice matched (001) LaAlO3 substrates is presented. Both electrode materials allow for the formation of ferroelectric capacitors with large remnant polarization (20-30 μC/cm2) and negligible fatigue, although slight differences arise regarding the promotion of either the rhombohedral or tetragonal phases of PZT. Far more crucial seems to be the tendency of SrRuO3 to develop a rougher surface at either small (<30 nm) or large thickness (>100 nm), and on YSZ substrates. In those cases a highly defective and possibly low dielectric interface forms between the electrode and the ferroelectric layer, resulting in greatly degraded ferroelectric performance. LaNiO3 is free from these limitations except for the cracks forming at very large thickness (>300 nm), and therefore appears as a more versatile electrode material.

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type
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