High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor

2017 ◽  
Vol 111 (24) ◽  
pp. 243504 ◽  
Author(s):  
Venkata S. N. Chava ◽  
Bobby G. Barker ◽  
Anusha Balachandran ◽  
Asif Khan ◽  
G. Simin ◽  
...  
Keyword(s):  
Schottky Contact ◽  
Epitaxial Graphene ◽  
Visible Blind

Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact

2005 ◽  
Vol 87 (2) ◽  
pp. 022105 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuo Koide ◽  
Jose Alvarez
Keyword(s):  
Tungsten Carbide ◽  
Schottky Contact ◽  
Thermally Stable ◽  
Visible Blind

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts

2014 ◽  
Vol 778-780 ◽  
pp. 1142-1145 ◽  
Author(s):  
Filippo Giannazzo ◽  
Stefan Hertel ◽  
Andreas Albert ◽  
Antonino La Magna ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Photoelectron Spectroscopy ◽  
Schottky Contact ◽  
Epitaxial Graphene ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Monolayer Graphene ◽  
Conductive Atomic Force Microscopy

Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.

scholarly journals Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO

2008 ◽  
Vol 93 (12) ◽  
pp. 123309 ◽  
Author(s):  
M. Nakano ◽  
T. Makino ◽  
A. Tsukazaki ◽  
K. Ueno ◽  
A. Ohtomo ◽  
...  
Keyword(s):  
High Performance ◽  
Schottky Contact ◽  
Visible Blind

scholarly journals High-Performance AlGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes

2003 ◽  
Vol 764 ◽  
Author(s):  
Ibrahim Kimukin ◽  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytür ◽  
Ekmel Ozbay
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
High Performance ◽  
Resonant Cavity ◽  
Schottky Contact ◽  
Uv Detector ◽  
Ito Thin Films ◽  
Schottky Devices ◽  
Visible Blind

AbstractWe have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

scholarly journals High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes

2003 ◽  
Vol 8 ◽  
Author(s):  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Ekmel Ozbay
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
Resonant Cavity ◽  
Schottky Contact ◽  
Uv Detector ◽  
Ito Thin Films ◽  
Schottky Devices ◽  
Visible Blind ◽  
Fast Pulse

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/Al0.2Ga0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

A Visible‐Blind Photodetector and Artificial Optoelectronic Synapse Using Liquid‐Metal Exfoliated ZnO Nanosheets

2021 ◽  
pp. 2100449
Author(s):  
Vaishnavi Krishnamurthi ◽  
Taimur Ahmed ◽  
Md Mohiuddin ◽  
Ali Zavabeti ◽  
Naresh Pillai ◽  
...  
Keyword(s):  
Liquid Metal ◽  
Zno Nanosheets ◽  
Visible Blind
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