scholarly journals Response to “Comment on ‘Thermally stable Ir Schottky contact on AlGaN/GaN heterostructure’ ” [Appl. Phys. Lett 83, 1272 (2003)]

2003 ◽  
Vol 83 (6) ◽  
pp. 1273-1274 ◽  
Author(s):  
Chang Min Jeon ◽  
Jong-Lam Lee
Keyword(s):  
Schottky Contact ◽  
Thermally Stable ◽  
Gan Heterostructure

Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

Vacuum ◽  
2013 ◽  
Vol 87 ◽  
pp. 150-154 ◽  
Author(s):  
Jin-Ping Ao ◽  
Yoshiki Naoi ◽  
Yasuo Ohno
Keyword(s):  
Schottky Contact ◽  
Thermally Stable ◽  
Gan Heterostructure

scholarly journals Fabrication of T-Gate AlGaN/GaN Heterostructure Field Effect Transistor with Thermally Stable Schottky Contact

2003 ◽  
Vol 0 (1) ◽  
pp. 74-77
Author(s):  
Chang Min Jeon ◽  
Jae-Hoon Lee ◽  
Jung-Hee Lee ◽  
Kyu-Seok Lee ◽  
Bun Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Schottky Contact ◽  
Thermally Stable ◽  
Effect Transistor ◽  
Gan Heterostructure

scholarly journals Thermally stable Ir Schottky contact on AlGaN/GaN heterostructure

2003 ◽  
Vol 82 (3) ◽  
pp. 391-393 ◽  
Author(s):  
Chang Min Jeon ◽  
Ho Won Jang ◽  
Jong-Lam Lee
Keyword(s):  
Schottky Contact ◽  
Thermally Stable ◽  
Gan Heterostructure

Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact

2005 ◽  
Vol 87 (2) ◽  
pp. 022105 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuo Koide ◽  
Jose Alvarez
Keyword(s):  
Tungsten Carbide ◽  
Schottky Contact ◽  
Thermally Stable ◽  
Visible Blind

Current Characteristics of AlGaN/AlN Ultraviolet Photodetector with Metal-Semiconductor-Metal Structure

2013 ◽  
Vol 300-301 ◽  
pp. 1285-1288
Author(s):  
Li Zen Hsieh ◽  
Jun Yan Chang
Keyword(s):  
Reference Sample ◽  
Schottky Contact ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Organic Chemical ◽  
Ultraviolet Photodetector ◽  
Metal Semiconductor Metal ◽  
Current Characteristics ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure

An AlGaN/AlN ultraviolet photodetector with metal-semiconductor-metal structure is fabricated on n type 4H-SiC substrate, which is conventionally epitaxial by metal-organic chemical vapor deposition (MOCVD). The MSM structure is composed of two interdigitated fingers usually formed by Schottky contact which deposited metal with high work function metal by e-beam metallization and thermal evaporator on high resistance layers. This type of MSM has potential advantages, including ultra low dark current because of its rectifying contacts. The current Characteristics are revealed in this paper. A reference sample of AlGaN/GaN heterostructure with two-dimensional electron gas (2DEG) is also fabricated for comparision.

Thermally stable PtSi Schottky contact on n-GaN

1997 ◽  
Vol 70 (10) ◽  
pp. 1275-1277 ◽  
Author(s):  
Q. Z. Liu ◽  
L. S. Yu ◽  
S. S. Lau ◽  
J. M. Redwing ◽  
N. R. Perkins ◽  
...  
Keyword(s):  
Schottky Contact ◽  
Thermally Stable
Sign in / Sign up

Export Citation Format

Share Document