Thermally stable PtSi Schottky contact on n-GaN

1997 ◽  
Vol 70 (10) ◽  
pp. 1275-1277 ◽  
Author(s):  
Q. Z. Liu ◽  
L. S. Yu ◽  
S. S. Lau ◽  
J. M. Redwing ◽  
N. R. Perkins ◽  
...  
Keyword(s):  
Schottky Contact ◽  
Thermally Stable

Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact

2005 ◽  
Vol 87 (2) ◽  
pp. 022105 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuo Koide ◽  
Jose Alvarez
Keyword(s):  
Tungsten Carbide ◽  
Schottky Contact ◽  
Thermally Stable ◽  
Visible Blind

Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

Vacuum ◽  
2013 ◽  
Vol 87 ◽  
pp. 150-154 ◽  
Author(s):  
Jin-Ping Ao ◽  
Yoshiki Naoi ◽  
Yasuo Ohno
Keyword(s):  
Schottky Contact ◽  
Thermally Stable ◽  
Gan Heterostructure

Tungsten carbide Schottky contact to diamond toward thermally stable photodiode

2005 ◽  
Vol 14 (11-12) ◽  
pp. 2003-2006 ◽  
Author(s):  
Meiyong Liao ◽  
Jose Alvarez ◽  
Yasuo Koide
Keyword(s):  
Tungsten Carbide ◽  
Schottky Contact ◽  
Thermally Stable

scholarly journals Fabrication of T-Gate AlGaN/GaN Heterostructure Field Effect Transistor with Thermally Stable Schottky Contact

2003 ◽  
Vol 0 (1) ◽  
pp. 74-77
Author(s):  
Chang Min Jeon ◽  
Jae-Hoon Lee ◽  
Jung-Hee Lee ◽  
Kyu-Seok Lee ◽  
Bun Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Schottky Contact ◽  
Thermally Stable ◽  
Effect Transistor ◽  
Gan Heterostructure

Thermally Stable Schottky Contact to n-GaAs Using W-Al Alloy and Al/W Two Layer Metal

1984 ◽  
Author(s):  
Hazime Matsuura ◽  
Hiroshi Nakamura ◽  
Toshimasa Ishida ◽  
Katsuzo Kaminishi
Keyword(s):  
Schottky Contact ◽  
Al Alloy ◽  
Thermally Stable

scholarly journals Thermally stable Ir Schottky contact on AlGaN/GaN heterostructure

2003 ◽  
Vol 82 (3) ◽  
pp. 391-393 ◽  
Author(s):  
Chang Min Jeon ◽  
Ho Won Jang ◽  
Jong-Lam Lee
Keyword(s):  
Schottky Contact ◽  
Thermally Stable ◽  
Gan Heterostructure

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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