Effects of low-temperature postannealing on a n+-p shallow junction fabricated by plasma doping

2005 ◽  
Vol 86 (19) ◽  
pp. 193503 ◽  
Author(s):  
Sungkweon Baek ◽  
Hyunsang Hwang ◽  
Kiju Im ◽  
Chang-Geun Ahn ◽  
Jong-Heon Yang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Shallow Junction ◽  
Plasma Doping

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

1995 ◽  
Vol 396 ◽  
Author(s):  
Shu Qin ◽  
James D. Bernstein ◽  
Chung Chan
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Impurity Profile ◽  
Device Structure ◽  
Hydrogen Etching ◽  
Shallow Junction ◽  
Dopant Profile ◽  
Plasma Doping ◽  
Junction Formation ◽  
Hydrogen Radicals

AbstractHydrogen etching effects in plasma ion implantation (PII) doping processes alter device structure and implant dopant profile and reduce the retained implant dose. This has particular relevance to the shallow junction devices of ultra large scale integrated circuits (ULSI). Hydrogen etching of semiconductor materials including Si, poly-Si, SiO2, Al, and photoresist films have been investigated. The effects of varying different PII process parameters are presented. The experimental data show that the spontaneous etching by hydrogen radicals enhanced by ion bombardment is responsible for the etching phenomena. A computer simulation is used to predict the as-implanted impurity profile and the retained implant dose for a shallow junction doping when the etching effect is considered.

Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing

1997 ◽  
Vol 70 (13) ◽  
pp. 1700-1702 ◽  
Author(s):  
R. Singh ◽  
K. C. Cherukuri ◽  
L. Vedula ◽  
A. Rohatgi ◽  
S. Narayanan
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Vacuum Ultraviolet ◽  
Rapid Thermal Processing ◽  
Shallow Junction ◽  
Junction Formation ◽  
Ultraviolet Photons

Plasma doping (PD) for ultra-shallow junction

2008 ◽  
Author(s):  
B. Mizuno ◽  
K. Okashita ◽  
K. Nakamoto ◽  
C.G. Jin ◽  
Y. Sasaki ◽  
...  
Keyword(s):  
Shallow Junction ◽  
Plasma Doping

The Electrical Phenomena of Non-planar Structure and Devices using Plasma Doping

2005 ◽  
Vol 864 ◽  
Author(s):  
Jong-Heon Yang ◽  
In-Bok Baek ◽  
Kiju Im ◽  
Chang-Geun Ahn ◽  
Sungkweon Baek ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Gate Oxide ◽  
Subthreshold Slope ◽  
Oxide Interface ◽  
Substrate Heating ◽  
Plasma Doping ◽  
Device Reliability ◽  
Research Show

AbstractWe fabricated narrow fins structures and non-planar MOSFETs like FinFETs and triple-gate MOSFETs using plasma doping with substrate heating under 350··, and measured their I-V characteristics. Fins and MOSFETs using low-temperature doping process show good current drivability and low subthreshold slope. However, without post high-temperature thermal annealing, this process could not avoid generating defects and traps as well as mobile protons on the gate and gate oxide interface and junctions, and therefore degraded device reliability. The results of ultra-small MOSFET research show possibility of new memory devices with these traps and ions in devices.

Vacancy Enhanced Boron Activation during Room Temperature Implantation and Low Temperature Annealing

2000 ◽  
Vol 610 ◽  
Author(s):  
Jian-Yue Jina ◽  
Irene Rusakova ◽  
Qinmian Li ◽  
Jiarui Liu ◽  
Wei-Kan Chu
Keyword(s):  
Low Temperature ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Activation Barrier ◽  
Promising Method ◽  
Activation Mechanism ◽  
Rich Region ◽  
Shallow Junction ◽  
Low Temperature Annealing ◽  
Junction Formation

AbstractLow temperature annealing combined with pre-damage (or preamorphization) implantation is a very promising method to overcome the activation barrier in ultra-shallow junction formation. We have made a 32 nm p+/n junction with sheet resistance of 290 /sq. using 20 keV 4×1014 Ω/cm2 Si followed by 2 keV 1×1015 at./cm2 B implantation and 10 minutes 550 °C annealing. This paper studies the boron activation mechanism during low temperature annealing. The result shows that placing B profile in the vacancyrich region has much better boron activation than placing B profile in interstitial-rich region or without pre-damage. It also shows that a significant portion of boron is in substitutional positions before annealing. The amount of substitutional boron is correlated to the amount of vacancies (damage) by the pre-damage Si implantation. The result supports our speculation that vacancy enhances boron activation.

Sign in / Sign up

Export Citation Format

Share Document