Effect of Low Temperature Annealing Prior to Non-melt Laser Annealing in Ultra-shallow Junction Formation

2007 ◽  
Author(s):  
Takumi Fukaya ◽  
Ryuta Yamada ◽  
Yuki Tanaka ◽  
Satoru Matsumoto ◽  
Toshiharu Suzuki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Annealing ◽  
Shallow Junction ◽  
Low Temperature Annealing ◽  
Junction Formation

Vacancy Enhanced Boron Activation during Room Temperature Implantation and Low Temperature Annealing

2000 ◽  
Vol 610 ◽  
Author(s):  
Jian-Yue Jina ◽  
Irene Rusakova ◽  
Qinmian Li ◽  
Jiarui Liu ◽  
Wei-Kan Chu
Keyword(s):  
Low Temperature ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Activation Barrier ◽  
Promising Method ◽  
Activation Mechanism ◽  
Rich Region ◽  
Shallow Junction ◽  
Low Temperature Annealing ◽  
Junction Formation

AbstractLow temperature annealing combined with pre-damage (or preamorphization) implantation is a very promising method to overcome the activation barrier in ultra-shallow junction formation. We have made a 32 nm p+/n junction with sheet resistance of 290 /sq. using 20 keV 4×1014 Ω/cm2 Si followed by 2 keV 1×1015 at./cm2 B implantation and 10 minutes 550 °C annealing. This paper studies the boron activation mechanism during low temperature annealing. The result shows that placing B profile in the vacancyrich region has much better boron activation than placing B profile in interstitial-rich region or without pre-damage. It also shows that a significant portion of boron is in substitutional positions before annealing. The amount of substitutional boron is correlated to the amount of vacancies (damage) by the pre-damage Si implantation. The result supports our speculation that vacancy enhances boron activation.

Low temperature annealing of nanocrystalline Si paste for pn junction formation

2021 ◽  
Vol 135 ◽  
pp. 106093
Author(s):  
Yusuke Kuboki ◽  
Huan Zhu ◽  
Morihiro Sakamoto ◽  
Hiroshige Matsumoto ◽  
Kungen Teii ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Pn Junction ◽  
Junction Formation ◽  
Nanocrystalline Si

Ultra-Shallow Junction Formation by a Non-Melting Process; Double-Pulsed Green Laser Annealing

2005 ◽  
Vol 862 ◽  
Author(s):  
Toshio Kudo ◽  
Susumu Sakuragi ◽  
Kazunori Yamazaki
Keyword(s):  
Penetration Depth ◽  
Laser Annealing ◽  
Melting Process ◽  
Green Laser ◽  
Deep Penetration ◽  
Shallow Junction ◽  
Junction Formation ◽  
Ultra Shallow Junctions ◽  
Short Annealing ◽  
Overlap Ratio

AbstractIn order to investigate the possibility of nanosecond activation in the non-melting state, we adopted the method of double-pulsed green laser annealing (DPSS), controlling effectively the combined pulse width with two pulsed lasers (pulse duration: ˜100ns, frequency: 1kHz). We investigated the formation of ultra-shallow junctions (USJ) less than 10nm in spite of the deep penetration depth of the green wavelength in crystalline Si (˜1000nm). In order to limit the depth of B implant, a Ge pre-amorphization implant was performed at an energy of 3keV to a dose of 3E+14/cm2. After the pre-amorphization implant, a B implant was performed at 0.2kev and doses of 5E+14/cm2 and 1E+15/cm2. The implanted B dopants remain within the pre-amorphized Si layer. The double-pulsed laser irradiation was performed with a homogenized line beam of 0.1mm x 17mm, scanning a sample stage at a constant velocity of 10mm/s, that is, at an overlap ratio of 90%. The non-melting state was found to be in the pulse energy density range of E ≤ 780mJ/cm2 at a delay time of 300ns. Overcoming the issues of the short annealing time (˜<1μs) and the deep penetration depth (˜1000nm), we succeeded in the ultra-shallow junction formation beyond the 45nm CMOS node: maximum junction depth of 6nm, minimum sheet resistance of 0.65kohm/sq at a B dose of 1E+15/cm2, an abruptness of 1.4nm/dec.

Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing

1997 ◽  
Vol 70 (13) ◽  
pp. 1700-1702 ◽  
Author(s):  
R. Singh ◽  
K. C. Cherukuri ◽  
L. Vedula ◽  
A. Rohatgi ◽  
S. Narayanan
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Vacuum Ultraviolet ◽  
Rapid Thermal Processing ◽  
Shallow Junction ◽  
Junction Formation ◽  
Ultraviolet Photons
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