Minority Carrier Lifetime, Diffusion Coefficient, and Surface Recombination Velocity of Silicon Wafers from Frequency‐Domain Measurement Using the Dual Mercury Probe Method

1992 ◽  
Vol 139 (6) ◽  
pp. 1741-1748 ◽  
Author(s):  
Eiichi Suzuki ◽  
Yutaka Hayashi
Keyword(s):  
Diffusion Coefficient ◽  
Frequency Domain ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers ◽  
Probe Method ◽  
Surface Recombination Velocity ◽  
Recombination Velocity

INFLUENCE OF THE ALKALI SURFACE TREATMENTS ON THE INTERFACE-STATES DENSITY AND MINORITY CARRIER LIFETIME IN Cz–SILICON WAFER

2018 ◽  
Vol 25 (07) ◽  
pp. 1950007
Author(s):  
M. MAOUDJ ◽  
D. BOUHAFS ◽  
N. BOUROUBA ◽  
A. EL AMRANI ◽  
R. BOUFNIK ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Electrochemical Impedance ◽  
Alkali Treatment ◽  
Surface Recombination ◽  
Minority Carrier Lifetime ◽  
Interface States ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Minority Charge Carrier

The chemical etching of the surface of silicon wafers is a critical step in the manufacturing process of all semiconductor devices. In this contribution, we investigate the effect of alkaline etching on minority carrier lifetime and interface-states density ([Formula: see text] of silicon wafers intended to be used as solar cell substrates. After alkali treatment, the surface morphology was analyzed using scanning electron microscopy (SEM) and UV-visible-NIR optical spectroscopy. Besides and as electrical characterizations, the minority charge carrier lifetime ([Formula: see text] was measured by the Quasi-Steady State Photoconductance technique (QSSPC), and the Electrochemical Impedance Spectroscopy was used to evaluate [Formula: see text]. These results were correlated with the surface recombination velocity (SRV) calculated by fitting the experimental data to the theory. The results of characterization showed a lower SRV and a higher apparent lifetime ([Formula: see text] obtained with 23[Formula: see text]wt.% KOH etching as compared to those obtained with 30[Formula: see text]wt.% NaOH; viz. 825[Formula: see text]cm[Formula: see text] against 1500[Formula: see text]cm.s[Formula: see text] and 32[Formula: see text][Formula: see text]s against 23[Formula: see text][Formula: see text]s, respectively. These findings were corroborated by [Formula: see text] measurements which gave [Formula: see text][Formula: see text]ev[Formula: see text]cm[Formula: see text] for KOH treatment and [Formula: see text][Formula: see text]ev[Formula: see text]cm[Formula: see text] for NaOH treatment.

scholarly journals Minority-Carrier Lifetime and Surface Recombination Velocity in Single-Crystal CdTe

2015 ◽  
Vol 5 (1) ◽  
pp. 366-371 ◽  
Author(s):  
Darius Kuciauskas ◽  
Ana Kanevce ◽  
Pat Dippo ◽  
Shahram Seyedmohammadi ◽  
Roger Malik
Keyword(s):  
Single Crystal ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Minority Carrier Lifetime ◽  
Surface Recombination Velocity ◽  
Recombination Velocity
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