Surface recombination velocity imaging of wet-cleaned silicon wafers using quantitative heterodyne lock-in carrierography

2018 ◽  
Vol 112 (1) ◽  
pp. 012105 ◽  
Author(s):  
Qiming Sun ◽  
Alexander Melnikov ◽  
Andreas Mandelis ◽  
Robert H. Pagliaro
Keyword(s):  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Velocity Imaging ◽  
Recombination Velocity ◽  
Lock In

Surface recombination velocity of silicon wafers by photoluminescence

2005 ◽  
Vol 86 (11) ◽  
pp. 112110 ◽  
Author(s):  
D. Baek ◽  
S. Rouvimov ◽  
B. Kim ◽  
T.-C. Jo ◽  
D. K. Schroder
Keyword(s):  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Recombination Velocity

Lifetime Characterization of Poly-Silicon Back Sealed Wafers with Bi-Surface Photoconductivity Decay Method

1997 ◽  
Vol 477 ◽  
Author(s):  
Y. Ogita ◽  
Y. Uematsu ◽  
H. Daio
Keyword(s):  
Thermal Oxidation ◽  
Wave Reflection ◽  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Poly Silicon ◽  
Photoconductivity Decay ◽  
Recombination Velocity

ABSTRACTBi-surface photoconductivity decay (BSPCD) method has been useful to obtain the true bulk lifetime and surface recombination velocities in silicon wafers with variously finished surfaces. Thermally oxidized n-type CZ silicon wafers with and without a poly-Si back seal (PBS) were characterized with the BSPCD method using 500 MHz-UHF wave reflection. It has been found that the surface recombination velocity of the PBS surface is, 4027 cm/s while that of the no-PBS surface is 16 cm/s, for example. The very fast surface recombination velocity is attributed to the poly-Si / Si interface character. Moreover, the bulk lifetime calculated in the PBS wafer is much higher than that in the no-PBS one, which reveals the PBS gettering performance for the thermal oxidation induced contamination.

Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography

2018 ◽  
Vol 282 ◽  
pp. 13-18
Author(s):  
Qi Ming Sun ◽  
Alexander Melnikov ◽  
Andreas Mandelis ◽  
Robert Pagliaro
Keyword(s):  
Quantitative Imaging ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Acquisition Time ◽  
Pixel Resolution ◽  
Spatially Resolved ◽  
Data Acquisition Time ◽  
Recombination Velocity ◽  
Evolution Behavior ◽  
Lock In

Surface electronic quality of wet-cleaned Si wafers was characterized quantitatively and all-optically via spatially-resolved surface recombination velocity (SRV) imaging using InGaAs-camera-based dynamic heterodyne lock-in carrierography. Six samples undergone four different hydrofluoric special-solution etching conditions were tested, their SRV distributions at different queue times after the hydrogen passivation processes were obtained, and a quantitative assessment of their surface electronic quality was made based on the evolution behavior of globally-integrated information from the SRV images. The data acquisition time for an SRV image with full camera pixel resolution was about 3 min. The methodology introduced here is promising for in-line nondestructive testing/evaluation and quality control at different fabrication/manufacturing stages in the electronic industry. Keywords: heterodyne lock-in carrierography, surface recombination velocity, quantitative imaging, HF etching, Si wafers

scholarly journals Adequate Method for Decoupling Bulk Lifetime and Surface Recombination Velocity in Silicon Wafers

2016 ◽  
Vol 130 (1) ◽  
pp. 188-190 ◽  
Author(s):  
N. Khelifati ◽  
D. Bouhafs ◽  
A. Mebarek-Azzem ◽  
S. El-Hak Abaidia ◽  
B. Palahouane ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Recombination Velocity ◽  
Adequate Method
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