Fundamentals of III-V Semiconductor MOSFETs
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Published By Springer US

9781441915467, 9781441915474
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Interfacial Chemistry of Oxides on III-V Compound Semiconductors

2010 ◽  
pp. 131-172 ◽  
Author(s):  
Marko Milojevic ◽  
Christopher L. Hinkle ◽  
Eric M. Vogel ◽  
Robert M. Wallace
Keyword(s):  
Compound Semiconductors ◽  
Interfacial Chemistry

Properties and Trade-Offs of Compound Semiconductor MOSFETs

2010 ◽  
pp. 7-27 ◽  
Author(s):  
Tejas Krishnamohan ◽  
Donghyun Kim ◽  
Krishna C. Saraswat
Keyword(s):  
Compound Semiconductor ◽  
Trade Offs

Theory of HfO2-Based High-k Dielectric Gate Stacks

2010 ◽  
pp. 51-92 ◽  
Author(s):  
Alexander A. Demkov ◽  
Xuhui Luo ◽  
Onise Sharia
Keyword(s):  
Gate Stacks ◽  
High K ◽  
High K Dielectric

Insulated Gate Nitride-Based Field Effect Transistors

2010 ◽  
pp. 379-422 ◽  
Author(s):  
M. Shur ◽  
G. Simin ◽  
S. Rumyantsev ◽  
R. Jain ◽  
R. Gaska
Keyword(s):  
Field Effect ◽  
Field Effect Transistors

Sub-100 nm Gate III-V MOSFET for Digital Applications

2010 ◽  
pp. 285-306
Author(s):  
K. Y. Cheng ◽  
Milton Feng ◽  
Donald Cheng ◽  
Chichih Liao

Device Physics and Performance Potential of III-V Field-Effect Transistors

2010 ◽  
pp. 31-50 ◽  
Author(s):  
Yang Liu ◽  
Himadri S. Pal ◽  
Mark S. Lundstrom ◽  
Dae-Hyun Kim ◽  
Jesús A. del Alamo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Device Physics ◽  
Performance Potential ◽  
And Performance
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