Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

2011 ◽  
Vol 109 (6) ◽  
pp. 064101 ◽  
Author(s):  
J. H. Yum ◽  
T. Akyol ◽  
M. Lei ◽  
T. Hudnall ◽  
G. Bersuker ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Beryllium Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Passivation Layer ◽  
Oxide Semiconductor

scholarly journals Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
J. H. Yum ◽  
J. Oh ◽  
Todd. W. Hudnall ◽  
C. W. Bielawski ◽  
G. Bersuker ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Field Effect Transistors ◽  
Beryllium Oxide ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Effective Electron

In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.

Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices

2005 ◽  
Vol 86 (9) ◽  
pp. 092107 ◽  
Author(s):  
Hyundoek Yang ◽  
Yunik Son ◽  
Sungkwon Baek ◽  
Hyunsang Hwang ◽  
Hajin Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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