Thermal stability of PECVD W-B-N thin film as a diffusion barrier

1997 ◽  
Author(s):  
YongTae Kim ◽  
Dong J. Kim ◽  
Chang W. Lee ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of

Effects of Nitrogen on Preventing the Crystallization of Amorphous Ta-Si-N Diffusion Barrier

1997 ◽  
Vol 473 ◽  
Author(s):  
Dong Joon Kim ◽  
Soon Pil Jeon ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Nitrogen Concentration ◽  
Amorphous State ◽  
Thermal Stability Of

ABSTRACTAmorphous Ta-Si-N thin film was deposited by dc sputterring of Ta5Si3 target in (Ar+N2) atmosphere. The crystal structure and the thermal stability of Ta-Si-N thin films were investigated by XRD, RBS, AES, Nomarski microscope, and TEM. When the concentration of nitrogen in Ta-Si-N thin film was higher than 40 at.%, the Ta-Si-N thin film remained the amorphous state after the annealing at 1100°C for 60 min. In this case, the Cu diffusion was prevented by the amorphous Ta-Si-N thin film even if the annealing temperature increased up to 900°C for 30 min. Whereas, the Ta-Si-N thin film with nitrogen concentration less than 40 at. % was transformed from the amorphous to the polycrystalline TaSi2 phases after the annealing at 900°C for 60 min and failed to prevent the Cu diffusion after the annealing at 700°C for 30 min.

TEM Studies of Plasma Deposited Tungsten and Tungsten Nitride Barriers for Thermally Stable Metallization

1993 ◽  
Vol 318 ◽  
Author(s):  
Chang Woo Lee ◽  
Yong Tae Kim ◽  
Suk-Ki Min ◽  
Choochon Lee ◽  
Jeong Yong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Compressive Stress ◽  
Lattice Constant ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Tungsten Nitride ◽  
Si Substrate ◽  
Chemical Vapor Deposited ◽  
Thermal Stability Of

ABSTRACTPlasma enhanced chemical vapor deposited tungsten nitride (PECVD-W67N33) thin film has been proposed as a diffusion barrier. The resistivity and lattice constant of PECVD-W67N33 are 110-28 μΩ-cm and 4.134 Å, respectively and this film has compressive stress of 2.6 × 1010 dyne/cm2. Thermal stability of PECVD-W67N33 as a diffusion barrier reveals that the interdiffusions between Al or W and Si substrate can be prevented by N interstitial atoms in fcc-W2N grains and grain boundaries.

Effects of Nitrogen on Preventing the Crystallization of Amorphous Ta-Si-N Diffusion Barrier

1997 ◽  
Vol 472 ◽  
Author(s):  
Dong Joon Kim ◽  
Soon Pil Jeong ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Nitrogen Concentration ◽  
Amorphous State ◽  
Thermal Stability Of

ABSTRACTAmorphous Ta-Si-N thin film was deposited by dc sputterring of Ta5Si3 target in (Ar+N2) atmosphere. The crystal structure and the thermal stability of Ta-Si-N thin films were investigated by XRD, RBS, AES, Nomarski microscope, and TEM. When the concentration of nitrogen in Ta-Si-N thin film was higher than 40 at.%, the Ta-Si-N thin film remained the amorphous state after the annealing at 1100°C for 60 min. In this case, the Cu diffusion was prevented by the amorphous Ta-Si-N thin film even if the annealing temperature increased up to 900°C for 30 min. Whereas, the Ta-Si-N thin film with nitrogen concentration less than 40 at. % was transformed from the amorphous to the polycrystalline TaSi2 phases after the annealing at 900°C for 60 min and failed to prevent the Cu diffusion after the annealing at 700°C for 30 min.

Intrinsic Thermal Stability of Anisotropic Thin-Film Superconductors

1990 ◽  
Vol 112 (1) ◽  
pp. 10-15 ◽  
Author(s):  
M. I. Flik ◽  
C. L. Tien
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Stability Criterion ◽  
High Temperature Superconductors ◽  
Stability Criteria ◽  
Anisotropic Thermal Conductivity ◽  
Operating Current ◽  
Released Energy ◽  
The Stability ◽  
Thermal Stability Of

Intrinsic thermal stability denotes a situation where a superconductor can carry the operating current without resistance at all times after the occurrence of a localized release of thermal energy. This novel stability criterion is different from the cryogenic stability criteria for magnets and has particular relevance to thin-film superconductors. Crystals of ceramic high-temperature superconductors are likely to exhibit anisotropic thermal conductivity. The resultant anisotropy of highly oriented films of superconductors greatly influences their thermal stability. This work presents an analysis for the maximum operating current density that ensures intrinsic stability. The stability criterion depends on the amount of released energy, the Biot number, the aspect ratio, and the ratio of the thermal conductivities in the plane of the film and normal to it.

Improving the stabilities of organic solar cells via employing a mixed cathode buffer layer

2021 ◽  
Vol 95 (3) ◽  
pp. 30201
Author(s):  
Xi Guan ◽  
Yufei Wang ◽  
Shang Feng ◽  
Jidong Zhang ◽  
Qingqing Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Solar Cells ◽  
Mixed Layer ◽  
Organic Solar Cells ◽  
Buffer Layers ◽  
Commercial Development ◽  
Conversion Efficiencies ◽  
Thermal Stability Of ◽  
Cathode Buffer Layers

Organic solar cells (OSCs) have been fabricated using cathode buffer layers based on bathocuproine (BCP) and 4,4'-N,N'-dicarbazole-biphenyl (CBP). It is found that despite nearly same power conversion efficiencies, the bilayer of BCP/CBP shows increased thermal stability of device than the monolayer of BCP, mostly because upper CBP thin film stabilizes under BCP thin film. The mixed layer of BCP:CBP gives slightly decreased efficiency than BCP and BCP/CBP, mostly because the electron mobility of the OSC using BCP:CBP is decreased than those using BCP and BCP/CBP. However, the BCP:CBP increases thermal stability of device than BCP and BCP/CBP, ascribed to that the BCP and CBP effectively inhibit reciprocal tendencies of crystallizations in the mixed layer. Moreover, the BCP:CBP improves the light stability of device than the BCP and BCP/CBP, because the energy transfer from BCP to CBP in in the mixed layer effectively decelerates the photodegradation of BCP. We provide a facial method to improve the stabilities of cathode buffer layers against heat and light, beneficial to the commercial development of OSCs.

scholarly journals Investigation of reactively sputtered TaN thin-film resistors for microwave photonic applications

2021 ◽  
pp. 93-98
Author(s):  
Evgenii Erofeev ◽  
Egor Polyntsev ◽  
Sergei Ishutkin
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Electrical Resistance ◽  
High Thermal Stability ◽  
Tantalum Nitride ◽  
Reactive Magnetron ◽  
Microwave Photonic ◽  
Thin Film Resistors ◽  
Thermal Stability Of

Electrophysical characteristics and their thermal stability of thin-film resistors based on tantalum nitride (TaN) obtained by reactive magnetron sputtering were investigated. The optimal modes of the magnetron sputtering process are determined, ensuring the Ta2N phase film composition with the value of the specific electrical resistance of 250 μm cm and high thermal stability of the parameters. On the basis of the investigations carried out, thin-film matching resistors were manufactured for use as part of an electro-optical InP-based MZ modulator

Thermal stability of ultra thin Zr-B-N films as diffusion barrier between Cu and Si

2020 ◽  
Vol 527 ◽  
pp. 146810
Author(s):  
Y. Meng ◽  
Z.X. Song ◽  
Y.H. Li ◽  
D. Qian ◽  
W. Hu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of
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