Efficient spin depolarization in ZnCdSe spin detector: an important factor limiting optical spin injection efficiency in ZnMnSe∕ZnCdSe spin light-emitting structures

2004 ◽  
Vol 85 (22) ◽  
pp. 5260-5262 ◽  
Author(s):  
W. M. Chen ◽  
I. A. Buyanova ◽  
K. Kayanuma ◽  
Z. H. Chen ◽  
A. Murayama ◽  
...  
2012 ◽  
Vol 190 ◽  
pp. 89-92
Author(s):  
M.V. Dorokhin ◽  
Y.A. Danilov ◽  
Alexei V. Kudrin ◽  
E.I. Malysheva ◽  
M.M. Prokof’eva ◽  
...  

The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.


2008 ◽  
Vol 93 (15) ◽  
pp. 152102 ◽  
Author(s):  
Y. Lu ◽  
V. G. Truong ◽  
P. Renucci ◽  
M. Tran ◽  
H. Jaffrès ◽  
...  

Author(s):  
Zhao Chen ◽  
Guojun Li ◽  
Haidi Wang ◽  
Qiong Tang ◽  
ZhongJun Li

Phosphorene-based device with fcc Co(111) electrodes shows excellent spin transport characteristics: large tunnel magnetoresistance ratio and stable spin injection efficiency.


2006 ◽  
Vol 99 (7) ◽  
pp. 073907 ◽  
Author(s):  
N. C. Gerhardt ◽  
S. Hövel ◽  
C. Brenner ◽  
M. R. Hofmann ◽  
F.-Y. Lo ◽  
...  

2008 ◽  
Vol 1 ◽  
pp. 021101 ◽  
Author(s):  
Lai Wang ◽  
Jiaxing Wang ◽  
Hongtao Li ◽  
Guangyi Xi ◽  
Yang Jiang ◽  
...  

2009 ◽  
Vol 2 ◽  
pp. 083003 ◽  
Author(s):  
Hidekazu Saito ◽  
Jean C. Le Breton ◽  
Vadym Zayets ◽  
Shinji Yuasa ◽  
Koji Ando

2018 ◽  
Vol 112 (9) ◽  
pp. 093107 ◽  
Author(s):  
Brelon J. May ◽  
Camelia M. Selcu ◽  
A. T. M. G. Sarwar ◽  
Roberto C. Myers

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