scholarly journals Reduction of Spin Injection Efficiency by Interface Defect Spin Scattering inZnMnSe/AlGaAs−GaAsSpin-Polarized Light-Emitting Diodes

2002 ◽  
Vol 89 (16) ◽  
Author(s):  
R. M. Stroud ◽  
A. T. Hanbicki ◽  
Y. D. Park ◽  
G. Kioseoglou ◽  
A. G. Petukhov ◽  
...  
2012 ◽  
Vol 190 ◽  
pp. 89-92
Author(s):  
M.V. Dorokhin ◽  
Y.A. Danilov ◽  
Alexei V. Kudrin ◽  
E.I. Malysheva ◽  
M.M. Prokof’eva ◽  
...  

The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.


2001 ◽  
Vol 79 (19) ◽  
pp. 3098-3100 ◽  
Author(s):  
B. T. Jonker ◽  
A. T. Hanbicki ◽  
Y. D. Park ◽  
G. Itskos ◽  
M. Furis ◽  
...  

2008 ◽  
Vol 93 (15) ◽  
pp. 152102 ◽  
Author(s):  
Y. Lu ◽  
V. G. Truong ◽  
P. Renucci ◽  
M. Tran ◽  
H. Jaffrès ◽  
...  

2006 ◽  
Vol 18 (32) ◽  
pp. 7703-7708 ◽  
Author(s):  
Moon-Ho Ham ◽  
Sukho Yoon ◽  
Yongjo Park ◽  
Lifeng Bian ◽  
Manfred Ramsteiner ◽  
...  

2008 ◽  
Vol 1 ◽  
pp. 021101 ◽  
Author(s):  
Lai Wang ◽  
Jiaxing Wang ◽  
Hongtao Li ◽  
Guangyi Xi ◽  
Yang Jiang ◽  
...  

2009 ◽  
Vol 2 ◽  
pp. 083003 ◽  
Author(s):  
Hidekazu Saito ◽  
Jean C. Le Breton ◽  
Vadym Zayets ◽  
Shinji Yuasa ◽  
Koji Ando

2018 ◽  
Vol 112 (9) ◽  
pp. 093107 ◽  
Author(s):  
Brelon J. May ◽  
Camelia M. Selcu ◽  
A. T. M. G. Sarwar ◽  
Roberto C. Myers

2011 ◽  
Vol 98 (25) ◽  
pp. 251112 ◽  
Author(s):  
Elison Matioli ◽  
Stuart Brinkley ◽  
Kathryn M. Kelchner ◽  
Shuji Nakamura ◽  
Steven DenBaars ◽  
...  

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