Substantial and stable magnetoresistance and spin conductance in phosphorene-based spintronic devices with Co electrodes

2021 ◽  
Author(s):  
Zhao Chen ◽  
Guojun Li ◽  
Haidi Wang ◽  
Qiong Tang ◽  
ZhongJun Li
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Injection Efficiency ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Magnetoresistance Ratio ◽  
Large Tunnel ◽  
Spin Conductance

Phosphorene-based device with fcc Co(111) electrodes shows excellent spin transport characteristics: large tunnel magnetoresistance ratio and stable spin injection efficiency.

Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides

2018 ◽  
Vol 20 (15) ◽  
pp. 10286-10291 ◽  
Author(s):  
Pei Zhao ◽  
Jianwei Li ◽  
Hao Jin ◽  
Lin Yu ◽  
Baibiao Huang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Spin Injection ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Injection Efficiency ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Metal Dichalcogenides ◽  
Spin Filtering

A robust spin-filtering device based on two-dimensional TMDs.

Spin Diffusion in the Finite Magnetic Heterojunction

2017 ◽  
Vol 727 ◽  
pp. 410-414
Author(s):  
Yi Lin Mi
Keyword(s):  
Spin Polarization ◽  
Organic Semiconductors ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Great Influence ◽  
Injection Efficiency ◽  
Spintronic Devices ◽  
Ferromagnetic Electrodes ◽  
Spin Polarons ◽  
The Difference

Spin diffusion in the finite magnetic heterojunction was explored considering the spin dependent conductivity. In organic semiconductor spintronic devices, the up-spin and down-spin polarons have different density once spin injection happens from ferromagnetic electrodes into organic semiconductors. The difference results in the spin dependent conductivity. The calculations show that the spin injection efficiency is dependent on the spin dependent conductivity and the size of the layers. The spin dependent conductivity has great influence on the spin injection efficiency in the finite magnetic heterojunction, when the spin polarization of the organic semiconductors is moderate.

Large tunnel magnetoresistance ratio in Fe/O/NaCl/O/Fe

2015 ◽  
Vol 118 (9) ◽  
pp. 093902 ◽  
Author(s):  
Kui Gong ◽  
Lei Zhang ◽  
Lei Liu ◽  
Yu Zhu ◽  
Guanghua Yu ◽  
...  
Keyword(s):  
Tunnel Magnetoresistance ◽  
Magnetoresistance Ratio ◽  
Large Tunnel

Spin Injection into Graphene from Heusler Alloy Co2MnGe (111) Surface: A First Principles Study

2018 ◽  
Vol 914 ◽  
pp. 111-116 ◽  
Author(s):  
Ya Xin Wang ◽  
Tong Sheng Xia
Keyword(s):  
First Principles ◽  
Heusler Alloy ◽  
Spin Injection ◽  
Ferromagnetic Material ◽  
Nonequilibrium State ◽  
Tunnel Barrier ◽  
Injection Efficiency ◽  
Spintronic Devices ◽  
First Principles Study ◽  
Spin Polarized

To obtain a larger spin signal for use in graphene-based spintronic devices, the spin injection efficiency needs to be enhanced. Previously researchers can increase the efficiency by inserting a tunnel barrier such as Al2O3or MgO between ferromagnet and graphene. However, the key value in spin transport is still very low because of the conductance mismatch as well as the limit to fabricate a high-quality tunnel barrier at the junction surface. Here we use a highly spin-polarized ferromagnetic material—Heusler alloy Co2MnGe as a substitutional scheme without the tunnel barrier. The spin injection efficiency of our Co2MnGe (111)/graphene junction can be as high as 73% which is much higher than 1% of ferromagnet/graphene or 30% of ferromagnet/oxide/graphene using first-principles study. The large spin polarization can be explicated by analyzing the transmission spectrum at the nonequilibrium state.

Magnetotransport properties of Co–Fe∕Al–N∕Co–Fe tunnel junctions with large tunnel magnetoresistance ratio

2004 ◽  
Vol 85 (1) ◽  
pp. 82-84 ◽  
Author(s):  
Tae Sick Yoon ◽  
Chong Oh Kim ◽  
Toshihiro Shoyama ◽  
Masakiyo Tsunoda ◽  
Migaku Takahashi
Keyword(s):  
Tunnel Junctions ◽  
Tunnel Magnetoresistance ◽  
Magnetoresistance Ratio ◽  
Large Tunnel

Materials, Devices and Spin Transfer Torque in Antiferromagnetic Spintronics: A Concise Review

SPIN ◽  
2017 ◽  
Vol 07 (03) ◽  
pp. 1740014 ◽  
Author(s):  
Cormac Ó Coileáin ◽  
Han Chun Wu
Keyword(s):  
Magnetic Fields ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Tetragonal Structure ◽  
Next Generation ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Concise Review ◽  
Plane Anisotropy ◽  
Magnetic States

From historical obscurity, antiferromagnets are recently enjoying revived interest, as antiferromagnetic (AFM) materials may allow the continued reduction in size of spintronic devices. They have the benefit of being insensitive to parasitic external magnetic fields, while displaying high read/write speeds, and thus poised to become an integral part of the next generation of logical devices and memory. They are currently employed to preserve the magnetoresistive qualities of some ferromagnetic based giant or tunnel magnetoresistance systems. However, the question remains how the magnetic states of an antiferromagnet can be efficiently manipulated and detected. Here, we reflect on AFM materials for their use in spintronics, in particular, newly recognized antiferromagnet Mn2Au with its in-plane anisotropy and tetragonal structure and high Néel temperature. These attributes make it one of the most promising candidates for AFM spintronics thus far with the possibility of architectures freed from the need for ferromagnetic (FM) elements. Here, we discuss its potential for use in ferromagnet-free spintronic devices.

ORGANIC SPINTRONICS: PAST, PRESENT AND FUTURE

SPIN ◽  
2014 ◽  
Vol 04 (02) ◽  
pp. 1440013 ◽  
Author(s):  
XIAO-RONG LV ◽  
SHI-HENG LIANG ◽  
LING-LING TAO ◽  
XIU-FENG HAN
Keyword(s):  
Quantum Computing ◽  
Spin Injection ◽  
High Density ◽  
Information Storage ◽  
Important Process ◽  
Seamless Integration ◽  
Spintronic Devices ◽  
Organic Spintronics ◽  
Emerging Trends ◽  
Research Hotspots

Organic spintronics, extended the conventional spintronics with metals, oxides and semiconductors, has opened new routes to explore the important process of spin-injection, transport, manipulation and detection, holding significant promise of revolutionizing future spintronic applications in high density information storage, multi-functional devices, seamless integration, and quantum computing. Here we survey this fascinating field from some new viewpoints on research hotspots and emerging trends. The main achievements and challenges arising from spin injection and transport, in organic materials are highlighted, as well as prospects of novel organic spintronic devices are also emphasized.

Increase in spin injection efficiency of a CoFe∕MgO(100) tunnel spin injector with thermal annealing

2005 ◽  
Vol 86 (5) ◽  
pp. 052901 ◽  
Author(s):  
R. Wang ◽  
X. Jiang ◽  
R. M. Shelby ◽  
R. M. Macfarlane ◽  
S. S. P. Parkin ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Spin Injection ◽  
Injection Efficiency

Strain modulation on spin transport properties of PTB junction with MoC2 electrodes

2021 ◽  
Author(s):  
Yaoxing Sun ◽  
Bei Zhang ◽  
shidong zhang ◽  
Dan Zhang ◽  
Jiwei Dong ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Electron Transport ◽  
Transport Properties ◽  
Density Functional ◽  
Spin Transport ◽  
Functional Theory ◽  
Spintronic Devices ◽  
Spin Polarized ◽  
Electron Transport Properties ◽  
Strain Modulation

Based on MoC2 nanoribbons and poly-(terphenylene-butadiynylene) (PTB) molecules, we designed MoC2-PTB molecular spintronic devices and investigated their spin-dependent electron transport properties by using spin-polarized density functional theory and non-equilibrium Green's...

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