Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts

2006 ◽  
Vol 99 (7) ◽  
pp. 073907 ◽  
Author(s):  
N. C. Gerhardt ◽  
S. Hövel ◽  
C. Brenner ◽  
M. R. Hofmann ◽  
F.-Y. Lo ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Spin Injection ◽  
Ferromagnetic Metal ◽  
Metal Contacts ◽  
Light Emitting

scholarly journals Highly Efficient Room Temperature Spin Injection in a Metal-Insulator-Semiconductor Light-Emitting Diode

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L502-L504 ◽  
Author(s):  
Pol Van Dorpe ◽  
Vasyl F. Motsnyi ◽  
Mayke Nijboer ◽  
Etienne Goovaerts ◽  
Viacheslav I. Safarov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Highly Efficient

Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction

2014 ◽  
Vol 59 (12) ◽  
pp. 1839-1843 ◽  
Author(s):  
M. V. Dorokhin ◽  
E. I. Malysheva ◽  
B. N. Zvonkov ◽  
A. V. Zdoroveishchev ◽  
Yu. A. Danilov ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Light Emitting

scholarly journals High speed pulsed electrical spin injection in spin-light emitting diode

2009 ◽  
Vol 94 (14) ◽  
pp. 141109 ◽  
Author(s):  
V. G. Truong ◽  
P.-H. Binh ◽  
P. Renucci ◽  
M. Tran ◽  
Y. Lu ◽  
...  
Keyword(s):  
High Speed ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Light Emitting ◽  
Electrical Spin

Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system

2010 ◽  
Vol 108 (6) ◽  
pp. 063902 ◽  
Author(s):  
E. Schuster ◽  
R. A. Brand ◽  
F. Stromberg ◽  
A. Ludwig ◽  
D. Reuter ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Prototype System ◽  
Light Emitting

Electrical spin injection using GaCrN in a GaN based spin light emitting diode

2013 ◽  
Vol 103 (24) ◽  
pp. 242408 ◽  
Author(s):  
D. Banerjee ◽  
R. Adari ◽  
S. Sankaranarayan ◽  
A. Kumar ◽  
S. Ganguly ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Spin Injection ◽  
Light Emitting ◽  
Electrical Spin

scholarly journals Room temperature spin injection in a light-emitting diode based on a GaMnSb/n-GaAs/InGaAs tunnel junction

2017 ◽  
Vol 816 ◽  
pp. 012035
Author(s):  
M V Dorokhin ◽  
M V Ved’ ◽  
E I Malysheva ◽  
P B Demina ◽  
A V Zdoroveyshchev ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Light Emitting

ELECTRICAL SPIN INJECTION FROM AN IRON-RICH IRON–PLATINUM THIN FILM INTO GALLIUM ARSENIDE

2008 ◽  
Vol 17 (01) ◽  
pp. 105-109
Author(s):  
ASAWIN SINSARP ◽  
TAKASHI MANAGO ◽  
FUMIYOSHI TAKANO ◽  
HIRO AKINAGA
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Optical Measurement ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Light Emitting ◽  
Iron Platinum ◽  
Spin Polarized ◽  
Out Of Plane ◽  
Electrical Spin

We fabricated an FePt / MgO tunneling junction ( Fe 55 atomic %) on a GaAs -based light-emitting-diode structure. The out-of-plane magnetization of the FePt thin film was confirmed by a magneto-optical measurement. The electrical spin injection from FePt into GaAs at room temperature was studied using the technique of spin-polarized electroluminescence. The spin polarization of the injected electrons under the magnetic field of 1 T was at least 6.0%. The remnant polarization at 0 T, which indicates the spin injection without a magnetic field, was at least 3.3%.

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