Nanoscale current uniformity and injection efficiency of nanowire light emitting diodes

2018 ◽  
Vol 112 (9) ◽  
pp. 093107 ◽  
Author(s):  
Brelon J. May ◽  
Camelia M. Selcu ◽  
A. T. M. G. Sarwar ◽  
Roberto C. Myers
Keyword(s):  
Light Emitting Diodes ◽  
Injection Efficiency ◽  
Light Emitting

Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes

2008 ◽  
Vol 1 ◽  
pp. 021101 ◽  
Author(s):  
Lai Wang ◽  
Jiaxing Wang ◽  
Hongtao Li ◽  
Guangyi Xi ◽  
Yang Jiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Injection Efficiency ◽  
Light Emitting

Highly Enhanced Electron-Injection Efficiency in GaAs-Based Light-Emitting Diodes Using a Fe/GaOxTunnel Injector

2009 ◽  
Vol 2 ◽  
pp. 083003 ◽  
Author(s):  
Hidekazu Saito ◽  
Jean C. Le Breton ◽  
Vadym Zayets ◽  
Shinji Yuasa ◽  
Koji Ando
Keyword(s):  
Light Emitting Diodes ◽  
Electron Injection ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Electron Injection Efficiency

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

2010 ◽  
Vol 54 (10) ◽  
pp. 1119-1124 ◽  
Author(s):  
Hongping Zhao ◽  
Guangyu Liu ◽  
Ronald A. Arif ◽  
Nelson Tansu
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Current Injection ◽  
Efficiency Droop ◽  
Injection Efficiency ◽  
Light Emitting

Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 56 (6) ◽  
pp. 060001
Author(s):  
田康凯 Tian Kangkai ◽  
楚春双 Chu Chunshuang ◽  
毕文刚 Bi Wengang ◽  
张勇辉 Zhang Yonghui ◽  
张紫辉 Zhang Zihui
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Efficiency Improvement ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

2019 ◽  
Vol 66 (11) ◽  
pp. 4811-4816 ◽  
Author(s):  
Roberto Macaluso ◽  
Giuseppe Lullo ◽  
Isodiana Crupi ◽  
Fulvio Caruso ◽  
Eric Feltin ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Injection Efficiency ◽  
Current Spreading ◽  
Light Emitting

Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer

2012 ◽  
Vol 190 ◽  
pp. 89-92
Author(s):  
M.V. Dorokhin ◽  
Y.A. Danilov ◽  
Alexei V. Kudrin ◽  
E.I. Malysheva ◽  
M.M. Prokof’eva ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Potential Barrier ◽  
Light Emitting Diodes ◽  
Spin Injection ◽  
High Potential ◽  
Hole Injection ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Electroluminescence Intensity ◽  
High Potential Barrier

The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.

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