The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicon structures

2004 ◽  
Vol 96 (12) ◽  
pp. 7568-7573 ◽  
Author(s):  
M. J. H. van Dal ◽  
D. Jawarani ◽  
J. G. M. van Berkum ◽  
M. Kaiser ◽  
J. A. Kittl ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Thermal Degradation ◽  
Polycrystalline Silicon ◽  
Silicon Structures

Investigation of an in-situ probe for phase transformations during RTP silicidation

1992 ◽  
Vol 260 ◽  
Author(s):  
R. J. Schreutelkamp ◽  
P. Vandenabeele ◽  
B. Deweerdt ◽  
W. Coppye ◽  
C. Vermeiren ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Thermal Degradation ◽  
Phase Transformations ◽  
Doping Level ◽  
Polycrystalline Silicon ◽  
Silicon Substrates ◽  
Si Substrates ◽  
Background Doping ◽  
Emissivity Measurements

ABSTRACTIn-situ emissivity measurements at a wavelength of 2.4 μα were used to monitor RTP Co silicidation on crystalline and polycrystalline silicon substrates. The influence of various parameters influencing the silicidation reaction was extensively studied. It is shown that particularly the phase transformation from CoSi to the final suicide phase, COSi2, strongly depends on parameters such as background doping level and type of substrate. This is illustrated for As-doped substrates. The method is extremely sensitive for the in-situ detection of the thermal degradation of thin COSi2 films at high temperatures, which is demonstrated for 25 nm COSi2 layers on highly As-doped c-Si substrates.

Oxidation of tantalum disilicide/polycrystalline silicon structures in dry O2

1982 ◽  
Vol 53 (7) ◽  
pp. 5342-5344 ◽  
Author(s):  
Reda R. Razouk ◽  
Michael E. Thomas ◽  
Sylvia L. Pressacco
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Structures

Stress measurement by microRaman spectroscopy of polycrystalline silicon structures

1995 ◽  
Vol 5 (2) ◽  
pp. 132-135 ◽  
Author(s):  
M S Benrakkad ◽  
M A Benitez ◽  
J Esteve ◽  
J M Lopez-Villegas ◽  
J Samitier ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Stress Measurement ◽  
Silicon Structures ◽  
Microraman Spectroscopy

Properties of Gallium Implanted Furnace and Rapidly Annealed Polycrystalline Silicon

1987 ◽  
Vol 92 ◽  
Author(s):  
H.B. Harrison ◽  
A.P. Pogany ◽  
Y. Komem
Keyword(s):  
Electrical Conductivity ◽  
Phase Transformation ◽  
Liquid Phase ◽  
Long Range ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Significant Movement ◽  
Lower Temperature ◽  
Polycrystalline Silicon Films

ABSTRACTPolycrystalline silicon films have been amorphized by implantation with 100keV Ga ions of doses 0.3 and 6×1015cm−2. These films were subsequently recrystallized using either a furnace for longer times lower temperature (∼30 mins, 600° C) or rapid thermal processing (RTP) for shorter times higher temperatures ( ≤ 30 sec, 800° C, 900° C) in an endeavour to suppress any long range movement of the Ga during the anneal phase. It is found that for both the furnace and RTP for temperatures ≤ 800°C no significant movement is observed and that the lower temperature anneal for the highest dose produces the highest electrical conductivity. By contrast however, annealing at 900° C, even though the initial conductivity is higher than for any other anneal we observe a significant reduction with time and extremely rapid movement of the dopant species throughout the original poly layer. An initial rationale for this behaviour is proposed in terms of a liquid phase transformation during annealing.

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