On the Si–SiO2 interface trap time constant distribution in metal-oxide-semiconductor transistors

2005 ◽  
Vol 97 (1) ◽  
pp. 014502 ◽  
Author(s):  
Y. Manéglia ◽  
F. Rahmoune ◽  
D. Bauza
Keyword(s):  
Metal Oxide ◽  
Time Constant ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Constant Distribution

scholarly journals Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

2014 ◽  
Vol 104 (13) ◽  
pp. 131605 ◽  
Author(s):  
Thenappan Chidambaram ◽  
Dmitry Veksler ◽  
Shailesh Madisetti ◽  
Andrew Greene ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Hall Method

Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

2013 ◽  
Vol 103 (20) ◽  
pp. 201607 ◽  
Author(s):  
R. D. Long ◽  
C. M. Jackson ◽  
J. Yang ◽  
A. Hazeghi ◽  
C. Hitzman ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap

Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide

2001 ◽  
Vol 693 ◽  
Author(s):  
R. Mehandru ◽  
B.P. Gila ◽  
J. Kim ◽  
J.W. Johnson ◽  
K.P. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Interface Trap Density ◽  
Interface Trap

AbstractGaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl2 based discharges was used to remove Sc2O3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1cm-2was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

Identification of Near-Interface Trap Distribution by Parameter Estimation

2019 ◽  
Vol 963 ◽  
pp. 240-243
Author(s):  
Yusuke Yamashita
Keyword(s):  
Parameter Estimation ◽  
Metal Oxide ◽  
Evaluation Method ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Distribution Model ◽  
Interface Trap ◽  
Mos Capacitor ◽  
Capacitance Transient

To identify the near-interface trap (NIT) distribution of a metal oxide semiconductor (MOS) capacitor, we propose a new evaluation method by parameter estimation through optimization. The MOS capacitor was fabricated with Al/SiO2 (75 nm)/SiC and measured by the capacitance transient (C-t) method. In addition, C-t signals were calculated from the assumed NIT distribution model. Then, the calculated C-t signals were modified to fit the measured signals by optimization of the parameters of the NIT model. The two types of NITs, deep (Ec – Et = 0.57 eV) and shallow (Ec – Et = -0.02 eV or-0.18 eV), were revealed by this method.

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