Point and Extended Defects in Semiconductors - NATO ASI Series
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Published By Springer US

9781468457117, 9781468457094

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Internal Friction Due to Defects in Semiconductors

Point and Extended Defects in Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5709-4_5 ◽

1989 ◽

pp. 65-75

Author(s):

P. Haasen ◽

U. Jendrich ◽

D. Laszig

Keyword(s):

Internal Friction ◽

Defects In Semiconductors

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Interaction between Point-Defects, Dislocations and a Grain Boundary: A HREM Study

Point and Extended Defects in Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5709-4_11 ◽

1989 ◽

pp. 153-164 ◽

Cited By ~ 1

Author(s):

J. Thibault-Desseaux ◽

J. L. Putaux ◽

H. O. K. Kirchner

Keyword(s):

Grain Boundary ◽

Point Defects

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Structure and Properties of Point Defects in Semiconductors

Point and Extended Defects in Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5709-4_1 ◽

1989 ◽

pp. 1-14 ◽

Cited By ~ 6

Author(s):

L. C. Kimerling

Keyword(s):

Point Defects ◽

Structure And Properties ◽

Defects In Semiconductors

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Changes of Electrical Properties of Silicon Caused by Plastic Deformation

Point and Extended Defects in Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5709-4_4 ◽

1989 ◽

pp. 51-63 ◽

Cited By ~ 4

Author(s):

Helmut Alexander

Keyword(s):

Plastic Deformation ◽

Electrical Properties

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Point Defects in GaAs

Point and Extended Defects in Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5709-4_3 ◽

1989 ◽

pp. 39-50

Author(s):

E. R. Weber ◽

K. Khachaturyan ◽

M. Hoinkis ◽

M. Kaminska

Keyword(s):

Point Defects

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Conductivity of Grain Boundaries and Dislocations in Semiconductors

Point and Extended Defects in Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5709-4_2 ◽

1989 ◽

pp. 15-37 ◽

Cited By ~ 8

Author(s):

R. Labusch ◽

J. Hess

Keyword(s):

Grain Boundaries

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Imaging of Extended Defects by Quenched Infra-Red Beam Induced Currents (Q-IRBIC)

Point and Extended Defects in Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5709-4_19 ◽

1989 ◽

pp. 257-268

Author(s):

A. Castaldini ◽

A. Cavallini

Keyword(s):

Extended Defects ◽

Infra Red ◽

Induced Currents

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Recombination at Dislocations in Silicon and Gallium Arsenide

Point and Extended Defects in Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5709-4_18 ◽

1989 ◽

pp. 243-256 ◽

Cited By ~ 11

Author(s):

P. R. Wilshaw ◽

T. S. Fell ◽

G. R. Booker

Keyword(s):

Gallium Arsenide

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Tunneling Spectroscopy and III-V Semiconductor Interfaces

Point and Extended Defects in Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5709-4_15 ◽

1989 ◽

pp. 201-205

Author(s):

O. Albrektsen ◽

H. W. M. Salemink

Keyword(s):

Tunneling Spectroscopy ◽

Semiconductor Interfaces

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The Influence of Residual Contamination on the Structure and Properties of Metal/GaAs Interfaces

Point and Extended Defects in Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5709-4_12 ◽

1989 ◽

pp. 165-178

Author(s):

Zuzanna Liliental-Weber

Keyword(s):

Structure And Properties

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Point and Extended Defects in Semiconductors - NATO ASI SeriesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer US

Internal Friction Due to Defects in Semiconductors

Interaction between Point-Defects, Dislocations and a Grain Boundary: A HREM Study

Structure and Properties of Point Defects in Semiconductors

Changes of Electrical Properties of Silicon Caused by Plastic Deformation

Point Defects in GaAs

Conductivity of Grain Boundaries and Dislocations in Semiconductors

Imaging of Extended Defects by Quenched Infra-Red Beam Induced Currents (Q-IRBIC)

Recombination at Dislocations in Silicon and Gallium Arsenide

Tunneling Spectroscopy and III-V Semiconductor Interfaces

The Influence of Residual Contamination on the Structure and Properties of Metal/GaAs Interfaces

Point and Extended Defects in Semiconductors - NATO ASI Series
Latest Publications