Laplace transform deep‐level transient spectroscopic studies of defects in semiconductors

1994 ◽  
Vol 76 (1) ◽  
pp. 194-198 ◽  
Author(s):  
L. Dobaczewski ◽  
P. Kaczor ◽  
I. D. Hawkins ◽  
A. R. Peaker
Keyword(s):  
Laplace Transform ◽  
Deep Level ◽  
Spectroscopic Studies ◽  
Defects In Semiconductors

scholarly journals Deep Level Transient Spectroscopic Studies of MOCVD GaN Layers Grown on Sapphire

1996 ◽  
Vol 90 (5) ◽  
pp. 955-958
Author(s):  
A.A. Śliwiński ◽  
K.P. Korona ◽  
K. Pakuła ◽  
J.M. Baranowski
Keyword(s):  
Deep Level ◽  
Spectroscopic Studies

Laplace-transform deep-level transient spectroscopy studies of the G4 gold–hydrogen complex in silicon

1998 ◽  
Vol 73 (21) ◽  
pp. 3126-3128 ◽  
Author(s):  
P. Deixler ◽  
J. Terry ◽  
I. D. Hawkins ◽  
J. H. Evans-Freeman ◽  
A. R. Peaker ◽  
...  
Keyword(s):  
Laplace Transform ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

Delta Doping for Deep Level Analysis in Semiconductors

1992 ◽  
Vol 281 ◽  
Author(s):  
J. Piprek ◽  
P. Krispin ◽  
H. Kostial ◽  
K. W. BÖer
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Device Simulation ◽  
Simulation Software ◽  
Level Energy ◽  
New Approach ◽  
Delta Doping ◽  
Capacitance Voltage ◽  
Defects In Semiconductors ◽  
Level Analysis

ABSTRACTThe occupation of deep-level defects in semiconductors is investigated by delta-doping such impurities at a specified distance from the metallurgical boundary within Schottky diodes. Capacitance-voltage characteristics are analyzed using ID device simulation software. These characteristics change significantly depending on the deep-level energy and the sheet position. This new approach to deep-level analysis is applied to Schottky diodes on MBE-grown n-GaAs with a planar titanium doped sheet. At moderate Ti concentrations the well-known Ti acceptor level near Ec-0.2 eV governs the electrical properties. In addition, two other types of Ti defects are found.

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