Comparison of models for silicon etching in CF4 + O2 plasma

Vacuum ◽  
2012 ◽  
Vol 86 (12) ◽  
pp. 1964-1968 ◽  
Author(s):  
R. Knizikevičius
Keyword(s):  
Silicon Etching ◽  
O2 Plasma

Specific features of intensification of silicon etching in CF4/O2 plasma

2007 ◽  
Vol 36 (5) ◽  
pp. 321-332 ◽  
Author(s):  
Yu. N. Grigoryev ◽  
A. G. Gorobchuk
Keyword(s):  
Silicon Etching ◽  
O2 Plasma

scholarly journals Inverse RIE Lag during Silicon Etching in SF6 + O2 Plasma

2020 ◽  
Vol 137 (3) ◽  
pp. 313-316
Author(s):  
R. Knizikevičius
Keyword(s):  
Silicon Etching ◽  
O2 Plasma

scholarly journals Silicon etching in a pulsed HBr/O2 plasma. I. Ion flux and energy analysis

2015 ◽  
Vol 33 (3) ◽  
pp. 032202 ◽  
Author(s):  
Moritz Haass ◽  
Maxime Darnon ◽  
Gilles Cunge ◽  
Olivier Joubert ◽  
David Gahan
Keyword(s):  
Energy Analysis ◽  
Ion Flux ◽  
Silicon Etching ◽  
O2 Plasma

scholarly journals Comparison between Bosch and STiGer Processes for Deep Silicon Etching

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1143
Author(s):  
Thomas Tillocher ◽  
Jack Nos ◽  
Gaëlle Antoun ◽  
Philippe Lefaucheux ◽  
Mohamed Boufnichel ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Cryogenic Temperature ◽  
Plasma Chemistry ◽  
Silicon Etching ◽  
Bosch Process ◽  
Isotropic Etching ◽  
Cryogenic Process ◽  
Sidewall Passivation ◽  
Free Plasma ◽  
O2 Plasma

The cryogenic process is well known to etch high aspect ratio features in silicon with smooth sidewalls. A time-multiplexed cryogenic process, called STiGer, was developed in 2006 and patented. Like the Bosch process, it consists in repeating cycles composed of an isotropic etching step followed by a passivation step. If the etching step is similar for both processes, the passivation step is a SiF4/O2 plasma that efficiently deposits a SiOxFy layer on the sidewalls only if the substrate is cooled at cryogenic temperature. In this paper, it is shown that the STiGer process can achieve profiles and performances equivalent to the Bosch process. However, since sidewall passivation is achieved with polymer free plasma chemistry, less frequent chamber cleaning is necessary, which contributes to increase the throughput.

ИССЛЕДОВАНИЕ ПРОЦЕССА ГЛУБОКОГО ТРАВЛЕНИЯ КРЕМНИЯ С МИНИМАЛЬНОЙ ШЕРОХОВАТОСТЬЮ СТЕНОК И ДНА СТРУКТУР

2020 ◽  
Vol 96 (3s) ◽  
pp. 668-675
Author(s):  
Я.А. Мирошкин
Keyword(s):  
Analytical Model ◽  
Phenomenological Description ◽  
Silicon Etching ◽  
Anisotropic Silicon Etching

Данная работа посвящена исследованию процессов глубокого анизотропного травления кремния. В качестве предложенных методов были проанализированы два подхода - Bosch и Cryo. Представлено феноменологическое описание вышеупомянутых методов, проведен анализ эксперимента по криогенному травлению кремния, полученный на базе ФТИАН, также предложена аналитическая модель Cryo-процесса. This work is devoted to the study of the processes of deep anisotropic silicon etching. Two approaches (Bosch and Cryo) have been analyzed as proposed methods. The phenomenological description of the above mentioned methods has been presented, the analysis of the experiment on cryogenic etching of silicon obtained on the basis of FTIAN has been carried out, as well as an analytical model of Cryo process has been proposed.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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