Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution

2004 ◽  
Vol 85 (4) ◽  
pp. 660-662 ◽  
Author(s):  
Tae Hun Kim ◽  
Jae Sung Sim ◽  
Jong Duk Lee ◽  
Hyung Cheol Shin ◽  
Byung-Gook Park
Keyword(s):  
Density Distribution ◽  
Elevated Temperatures ◽  
Silicon Oxide ◽  
Trap Density ◽  
Silicon Structure ◽  
Charge Decay ◽  
Nitride Oxide

Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory

2006 ◽  
Vol 89 (16) ◽  
pp. 163514 ◽  
Author(s):  
Shaw-Hung Gu ◽  
Tahui Wang ◽  
Wen-Pin Lu ◽  
Yen-Hui Joseph Ku ◽  
Chih-Yuan Lu
Keyword(s):  
Leakage Current ◽  
Flash Memory ◽  
Silicon Oxide ◽  
Trap Density ◽  
Stress Induced Leakage Current ◽  
Nitride Oxide

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

2011 ◽  
Vol 1299 ◽  
Author(s):  
Ping Du ◽  
I-Kuan Lin ◽  
Yunfei Yan ◽  
Xin Zhang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Elevated Temperatures ◽  
Silicon Oxide ◽  
Composite Films ◽  
Deposition Process ◽  
Silicon Oxycarbide ◽  
X Ray ◽  
Curvature Measurement ◽  
Film Substrate

ABSTRACTSilicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.

Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures

2001 ◽  
Vol 89 (5) ◽  
pp. 2791-2800 ◽  
Author(s):  
H. Bachhofer ◽  
H. Reisinger ◽  
E. Bertagnolli ◽  
H. von Philipsborn
Keyword(s):  
Silicon Oxide ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Transient Conduction ◽  
Nitride Oxide

Scalable 2-bit silicon–oxide–nitride–oxide–silicon (SONOS) memory with physically separated local nitrides under a merged gate

2004 ◽  
Vol 48 (10-11) ◽  
pp. 1771-1775 ◽  
Author(s):  
Yong Kyu Lee ◽  
Suk Kang Sung ◽  
Jae Sung Sim ◽  
Ki Whan Song ◽  
Jong Duk Lee ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Nitride Oxide
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