Electrical characteristics of a stacked nitride/microcrystalline‐silicon/oxide/silicon structure

1993 ◽  
Vol 63 (1) ◽  
pp. 24-26 ◽  
Author(s):  
Shye Lin Wu ◽  
Chung Len Lee ◽  
Tan Fu Lei
Keyword(s):  
Silicon Oxide ◽  
Electrical Characteristics ◽  
Silicon Structure ◽  
Microcrystalline Silicon

Fabrication and Electrical Characteristics of Metal-Ferroelectric Ba(Zr0.1Ti0.9)O3 Film–Insulator-Silicon Structure

2013 ◽  
Vol 143 (1) ◽  
pp. 40-46 ◽  
Author(s):  
Kai-Huang Chen ◽  
Chien-Min Cheng ◽  
Chun-Cheng Lin ◽  
Jen-Hwan Tsai
Keyword(s):  
Electrical Characteristics ◽  
Silicon Structure

Optical Properties of Microcrystalline Silicon in Oxide Matrix through Partial Oxidation of Anodized Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
Toshimichi Ito ◽  
Toshimichi Ohta ◽  
Osamu Arakaki ◽  
Akio Hiraki
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Partial Oxidation ◽  
Silicon Oxide ◽  
Light Emission ◽  
Wavelength Region ◽  
Microcrystalline Silicon ◽  
Quantum Size ◽  
Visible Luminescence ◽  
Oxide Matrix

ABSTRACTMicrocrystalline silicon embedded in silicon oxide has been prepared by means of partial oxidation of porous silicon produced anodically from degenerate p-Si wafers. Their optical properties such as absorption coefficients and luminescence have been characterized. Results show blue shifts in absorption and photoluminescence spectra in a visible wavelength region with decreasing size of the microcrystalline Si in the Si oxide matrix. The quantum size effect is discussed as well as possible origins of the observed visible luminescence, including light emission from as-anodized (or H-chemisorbed) porous silicon.

scholarly journals Mixed phase silicon oxide layers for thin-film silicon solar cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Peter Cuony ◽  
Duncan T.L. Alexander ◽  
Linus Löfgren ◽  
Michael Krumrey ◽  
Michael Marending ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Silicon Oxide ◽  
Nanocrystalline Silicon ◽  
Silicon Solar Cells ◽  
Microstructural Properties ◽  
Microcrystalline Silicon ◽  
Thin Film Silicon ◽  
Transmission Electron ◽  
Doped Silicon

ABSTRACTLower absorption, lower refractive index and tunable resistance are three advantages of doped silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to doped microcrystalline silicon, for the use as p- and n-type layers in thin-film silicon solar cells. In this study we show how optical, electrical and microstructural properties of nc-SiOx layers depend on precursor gas ratios and we propose a growth model to explain the phase separation in such films into Si-rich and O-rich regions as visualized by energy-filtered transmission electron microscopy.

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