Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures

2006 ◽  
Vol 89 (6) ◽  
pp. 063508 ◽  
Author(s):  
Tae Hun Kim ◽  
Il Han Park ◽  
Jong Duk Lee ◽  
Hyung Cheol Shin ◽  
Byung-Gook Park
Keyword(s):  
Silicon Nitride ◽  
Density Distribution ◽  
Elevated Temperatures ◽  
Silicon Oxide ◽  
Negative Charge ◽  
Electron Trap ◽  
Trap Density ◽  
Silicon Structure ◽  
Charge Decay ◽  
Nitride Oxide

TEM Imaging of Amorphous Silicon Oxide - Silicon Nitride - Silicon Oxide Dielectric Films

2001 ◽  
Vol 7 (S2) ◽  
pp. 1228-1229
Author(s):  
Lew Rabenberg ◽  
J. P. Zhou ◽  
Kil-Soo Ko ◽  
Rita Johnson
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Atomic Number ◽  
Silicon Oxide ◽  
Gate Dielectrics ◽  
Dielectric Films ◽  
Amorphous Silicon Oxide ◽  
Nitride Oxide ◽  
Silicon Based

Thin films of amorphous silicon oxide and silicon nitride are routinely used as gate dielectrics in silicon-based microelectronic devices. It is valuable to be able to image them and measure their thicknesses quickly and accurately. This brief note describes conditions that can be used to obtain accurate and reproducible TEM images of oxide-nitride-oxide (ONO) thin films.Obtaining adequate contrast differences between oxide and nitride is not trivial because they have the same average atomic number, and both phases are amorphous. As stoichiometric compounds, both SiO2 and Si3N4 would have average atomic numbers equal to 10. For SiO2, (14+2(8))/3=10, and for Si3N4, (3(14)+4(7))/7=10. Thus, the atomic number contrast between these two is weak or nonexistent. Similarly, the amorphous character prevents the use of conventional diffraction contrast techniques.However, the density of Si3N4 (3.2 g/cm3) is considerably greater than the density of SiO2 (2.6 g/cm3), reflecting the higher average coordination of N compared with O.

Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory

2006 ◽  
Vol 89 (16) ◽  
pp. 163514 ◽  
Author(s):  
Shaw-Hung Gu ◽  
Tahui Wang ◽  
Wen-Pin Lu ◽  
Yen-Hui Joseph Ku ◽  
Chih-Yuan Lu
Keyword(s):  
Leakage Current ◽  
Flash Memory ◽  
Silicon Oxide ◽  
Trap Density ◽  
Stress Induced Leakage Current ◽  
Nitride Oxide

scholarly journals Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory

Micromachines ◽  
2019 ◽  
Vol 10 (6) ◽  
pp. 356 ◽  
Author(s):  
Seung-Dong Yang ◽  
Jun-Kyo Jung ◽  
Jae-Gab Lim ◽  
Seong-gye Park ◽  
Hi-Deok Lee ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Flash Memory ◽  
Silicon Oxide ◽  
Charge Trapping ◽  
Charge Migration ◽  
Charge Loss ◽  
Capacitance Voltage ◽  
Nitride Oxide ◽  
N2 Plasma

In order to suppress the intra-nitride charge spreading in 3D Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) flash memory where the charge trapping layer silicon nitride is shared along the cell string, N2 plasma treated on the silicon nitride is proposed. Experimental results show that the charge loss decreased in the plasma treated device after baking at 300 °C for 2 h. To extract trap density according to the location in the trapping layer, capacitance-voltage analysis was used and N2 plasma treatment was shown to be effective to restrain the interface trap formation between blocking oxide and silicon nitride. Moreover, from X-ray Photoelectron Spectroscopy, the reduction of Si-O-N bonding was observed.

scholarly journals A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

2017 ◽  
Vol 124 ◽  
pp. 288-294 ◽  
Author(s):  
Barbora Mojrová ◽  
Haifeng Chu ◽  
Christop Peter ◽  
Pirmin Preis ◽  
Jan Lossen ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Comparison Study

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior
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