Scaling to Sub-1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition

2006 ◽  
Vol 153 (8) ◽  
pp. F180 ◽  
Author(s):  
Annelies Delabie ◽  
Matty Caymax ◽  
Bert Brijs ◽  
David P. Brunco ◽  
Thierry Conard ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Layer Deposition

Surface Preparation Techniques for the Atomic Layer Deposition of Hafnium Oxide

2006 ◽  
Vol 917 ◽  
Author(s):  
Laura Nyns ◽  
Lindsey Hall ◽  
Thierry Conard ◽  
Annelies Delabie ◽  
Wim Deweerd ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Hydroxyl Groups ◽  
Oh Groups ◽  
Layer Deposition ◽  
Wet Chemical ◽  
The Impact

AbstractAtomic layer deposition (ALD) has been successfully used over the years for the deposition of conformal dielectric layers with precise thickness down to the nanometer scale. Therefore, optimization of the growth behaviour of the dielectric is mandatory. Since ALD is a surface sensitive growth technique, determined by the amount of available reaction sites at the starting surface, the impact of various wet chemical and thermal Si treatments on the HfO2 growth was evaluated. Thin SiO2 starting layers, based on wet chemical processing, were prepared by using a diluted peroxide mixture and an ozone/DI-water treatment. The thermally grown oxides were gradually etched by slowly immersing the oxidized Si substrate into a diluted HF solution, creating a thickness range on a single wafer. Our results demonstrate that the HfO2 deposition is more dependent on the thickness of the SiO2 layer than on the chemistry used to grow the oxide layer. For all studied oxides, two regions can clearly be distinguished. First, a linear relationship between the oxide thickness and the amount of deposited HfO2 is seen. Because chemical oxides tend to grow in islands, this trend can be explained by an increase in density of surface OH groups when the oxide grows thicker. When an ellipsometric thickness of ~0.8 nm is reached, saturation of the HfO2 growth is obtained. We believe that, from this thickness on, the starting surface is completely covered with hydroxyl groups, leaving the HfO2 growth only dependent on the ALD process itself. Since both the wet chemical as the thermal oxides are showing the same trend in HfO2 deposition, it can be stated that surface preparations can be selected solely based on their ease of processing. However, the electrical results show that there may be a difference between the ozone based wet chemical oxides and the etched thermal oxides, since the latter seems to possess slightly more leakage current. The electrical results will be discussed in more detail during the presentation.

scholarly journals Preparation of Hafnium Oxide Thin Films grown by Atomic Layer Deposition

2005 ◽  
Vol 15 (4) ◽  
pp. 275-280
Author(s):  
Hie-Chul Kim ◽  
Min-Wan Kim ◽  
Hyung-Su Kim ◽  
Hyug-Jong Kim ◽  
Woo-Keun Sohn ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

2002 ◽  
Vol 92 (10) ◽  
pp. 5698-5703 ◽  
Author(s):  
Kaupo Kukli ◽  
Mikko Ritala ◽  
Jonas Sundqvist ◽  
Jaan Aarik ◽  
Jun Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition
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