Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

2009 ◽  
Vol 94 (26) ◽  
pp. 262904 ◽  
Author(s):  
S. Abermann ◽  
O. Bethge ◽  
C. Henkel ◽  
E. Bertagnolli
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Layer Deposition ◽  
High K

scholarly journals Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1085 ◽  
Author(s):  
Kemelbay ◽  
Tikhonov ◽  
Aloni ◽  
Kuykendall
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Ambient Conditions ◽  
Nucleation Layer ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

Scaling to Sub-1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition

2006 ◽  
Vol 153 (8) ◽  
pp. F180 ◽  
Author(s):  
Annelies Delabie ◽  
Matty Caymax ◽  
Bert Brijs ◽  
David P. Brunco ◽  
Thierry Conard ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Layer Deposition

Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor

2015 ◽  
Vol 15 (1) ◽  
pp. 382-385
Author(s):  
Jun Hee Cho ◽  
Sang-Ick Lee ◽  
Jong Hyun Kim ◽  
Sang Jun Yim ◽  
Hyung Soo Shin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Metal Gate ◽  
Layer Deposition ◽  
High K
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