scholarly journals Electron Transport Properties of AlxGa1−xN/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations

2019 ◽  
Vol 11 (4) ◽  
Author(s):  
Jingtian Fang ◽  
Massimo V. Fischetti ◽  
Ronald D. Schrimpf ◽  
Robert A. Reed ◽  
Enrico Bellotti ◽  
...  
Author(s):  
Sebastian Eisele ◽  
Fabian M. Draber ◽  
Steffen Grieshammer

First principles calculations and Monte Carlo simulations reveal the impact of defect interactions on the hydration of barium-zirconate.


AIP Advances ◽  
2015 ◽  
Vol 5 (1) ◽  
pp. 017145 ◽  
Author(s):  
Ping Wang ◽  
Linlin Hu ◽  
Yintang Yang ◽  
Xuefei Shan ◽  
Jiuxu Song ◽  
...  

1998 ◽  
Vol 83 (3) ◽  
pp. 1446-1449 ◽  
Author(s):  
J. D. Albrecht ◽  
R. P. Wang ◽  
P. P. Ruden ◽  
M. Farahmand ◽  
K. F. Brennan

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