Electron Transport Properties of
AlxGa1−xN/GaN
Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations
2017 ◽
pp. 94-114
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Keyword(s):
2011 ◽
Vol 115
(31)
◽
pp. 15586-15591
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2014 ◽
Vol 25
◽
pp. 251-257
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Keyword(s):