Depth profile of concentration of deep‐level impurities in vapor‐phase epitaxial gallium‐arsenide grown under various arsenic vapor pressures

1973 ◽  
Vol 44 (3) ◽  
pp. 1316-1326 ◽  
Author(s):  
Hiroshi Okamoto ◽  
Seizo Sakata ◽  
Kazuo Sakai
Keyword(s):  
Gallium Arsenide ◽  
Depth Profile ◽  
Vapor Phase ◽  
Deep Level ◽  
Vapor Pressures

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

Initial stages of gallium arsenide metalorganic vapor phase epitaxy

2016 ◽  
Vol 52 (10) ◽  
pp. 985-989 ◽  
Author(s):  
P. B. Boldyrevskii ◽  
D. O. Filatov ◽  
I. A. Kazantseva ◽  
D. S. Smotrin ◽  
M. V. Revin
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Luminescence of TM3+ in Gallium Arsenide Grown by Metal-Organic Vapor Phase Epitaxy

1993 ◽  
Vol 301 ◽  
Author(s):  
Achim DÖrnen ◽  
Klaus Pressel ◽  
Christoph Hiller ◽  
Dieter Haase ◽  
JÜrgen Weber ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Photoluminescence Excitation ◽  
Excitation Mechanism ◽  
Organic Vapor ◽  
Metal Organic

ABSTRACTWe investigate the excitation mechanism of the characteristic 4f luminescence 3H5 →3H6 of Tm3+ in GaAs by photoluminescence excitation spectroscopy. This luminescence transition is also used to study the incorporation of thulium into the GaAs lattice by angular dependent Zeeman spectroscopy.

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

Depth Profile of the Excitonic Luminescence in Gallium-Nitride Layers

1996 ◽  
Vol 449 ◽  
Author(s):  
H. Siegle ◽  
A. Hoffmann ◽  
L. Eckey ◽  
C. Thomsen ◽  
T. Detchprohm ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Depth Profile ◽  
Vapor Phase ◽  
Blue Shift ◽  
Peak Position ◽  
Hydride Vapor Phase Epitaxy ◽  
Spatially Resolved ◽  
Nitride Layers ◽  
Excitonic Luminescence ◽  
Strong Blue Shift

ABSTRACTWe present results of spatially-resolved photoluminescence and Raman measurements on a 200 μm thick GaN layer grown on sapphire by hydride vapor phase epitaxy. Our microphotoluminescence measurements reveal that the peak position of the excitonic and donoracceptor-pair transitions strongly depends on the distance to the substrate interface. We observed a strong blue shift near the interface and discuss the influence of strain, which we quantified by micro-Raman experiments.

scholarly journals Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Wondwosen Metaferia ◽  
Kevin L. Schulte ◽  
John Simon ◽  
Steve Johnston ◽  
Aaron J. Ptak
Keyword(s):  
Gallium Arsenide ◽  
Solar Cells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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