scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

Growth and properties of GaxIn1−xAs–GaAs strained layer superlattices grown by low-pressure metal-organic vapour-phase epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 909-912 ◽  
Author(s):  
A. P. Roth ◽  
R. A. Masut ◽  
M. Sacilotti ◽  
P. J. D'Arcy ◽  
G. I. Sproule ◽  
...  
Keyword(s):  
Gas Flow ◽  
Flow Direction ◽  
Low Pressure ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Strained Layer ◽  
Additional Strain ◽  
Metal Organic ◽  
Organic Vapour ◽  
Strained Layer Superlattices

We have analyzed the structural and optical properties of GaxIn1−xAs–GaAs strained-layer superlattices (SLS) grown by low-pressure metal-organic vapour-phase epitaxy. Sample uniformity over 2.5 cm × 2.5 cm has been studied by X-ray diffraction and low-temperature photoluminescence. The sample composition and period are uniform in the longitudinal direction (gas-flow direction in the reactor) and in the central portion (1.5 cm) in the transverse direction. On each side, the In composition decreases slightly towards the edges, as shown by an energy shift of the photoluminescence excitonic recombinations. Comparison of experimental and calculated transition energies in a series of samples, taking into account strain and quantization, shows clearly that SLS grown on mismatched buffer layers arc under additional strain. This additional strain is not present when the layer or whole SLS thicknesses exceed a critical value beyond which the mismatch is partially accommodated by misfit dislocations.

Investigation of the cationic ordering in InGaP/GaAs epilayers grown by low-pressure, metal organic vapour phase epitaxy

1994 ◽  
Vol 28 (1-3) ◽  
pp. 219-223 ◽  
Author(s):  
L. Francesio ◽  
P. Franzosi ◽  
M. Caldironi ◽  
L. Vitali ◽  
M. Dellagiovanna ◽  
...  
Keyword(s):  
Low Pressure ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Correlation of Ingap(001) Surface Structure During Growth and CuptB-Type Bulk Ordering

1999 ◽  
Vol 583 ◽  
Author(s):  
M. Zorn ◽  
P. Kurpas ◽  
A. Bhattacharya ◽  
M. Weyers ◽  
J.-T. Zettler ◽  
...  
Keyword(s):  
Surface Structure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Surface Conditions ◽  
Reflectance Anisotropy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Lattice Matched

AbstractThe mechanism causing the CuPtB-type ordering of InGaP grown lattice matched to GaAs was investigated by in-situ reflectance anisotropy spectroscopy (RAS/RDS). Experiments were performed during InGaP growth in metal-organic vapour phase epitaxy (MOVPE). From the experiments it can be concluded that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2×1)-like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich (2×4)-like surface dimer configuration.

The metal organic vapour phase epitaxy of ZnTe: II. Analysis of growth conditions

1995 ◽  
Vol 31 (1-2) ◽  
pp. 45-117 ◽  
Author(s):  
W.S. Kuhn ◽  
B. Qu'Hen ◽  
O. Gorochov ◽  
R. Triboulet ◽  
W. Gebhardt
Keyword(s):  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Plasma assisted nitrogen doping of ZnSe grown by MOVPE

1994 ◽  
Vol 340 ◽  
Author(s):  
T. Cloitre ◽  
O. Briot ◽  
N. Briot ◽  
B. Gil ◽  
R.L. Aulombard
Keyword(s):  
Nitrogen Doping ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Active Species ◽  
Vapour Phase Epitaxy ◽  
Carrier Gas ◽  
Metal Organic ◽  
Organic Vapour ◽  
Carrier Gases ◽  
P Type

ABSTRACTWe designed a plasma cell for nitrogen doping of ZnSe, using a metal organic vapour phase epitaxy (MOVPE) horizontal reactor. With the following growth conditions: Tg=300°C, P=1 Torr and a molar VI/II ratio of 5, successful p-type doping was obtained, as assessed by photoluminescence experiments, but with a free carrier concentration still too low to be detected by transport measurements. The passivation of nitrogen active species by hydrogen is discussed. The possible interaction with the carrier gas has been studied through the use of H2, N2 and He as carrier gases. We demonstrate that the use of helium as carrier gas leads to sensible improvement of the photoluminescence features related to nitrogen acceptor. On the other hand, the use of N2 as carrier gas leads to poor homogeneity of the layers with few effects on the doping level.

Improvements in the structural quality of Al0.48In0.52As grown by low pressure metal-organic vapour-phase epitaxy

1988 ◽  
Vol 3 (3) ◽  
pp. 223-226 ◽  
Author(s):  
J I Davies ◽  
P D Hodson ◽  
A C Marshall ◽  
M D Scott ◽  
R J M Griffiths
Keyword(s):  
Low Pressure ◽  
Vapour Phase ◽  
Structural Quality ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour
Sign in / Sign up

Export Citation Format

Share Document