Gallium Arsenide Solar Cell Vapor Phase (MOCVD) Technology

1984 ◽  
Author(s):  
Y. C. M. Yeh ◽  
P. A. Iles
Keyword(s):  
Gallium Arsenide ◽  
Solar Cell ◽  
Vapor Phase

Initial stages of gallium arsenide metalorganic vapor phase epitaxy

2016 ◽  
Vol 52 (10) ◽  
pp. 985-989 ◽  
Author(s):  
P. B. Boldyrevskii ◽  
D. O. Filatov ◽  
I. A. Kazantseva ◽  
D. S. Smotrin ◽  
M. V. Revin
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Luminescence of TM3+ in Gallium Arsenide Grown by Metal-Organic Vapor Phase Epitaxy

1993 ◽  
Vol 301 ◽  
Author(s):  
Achim DÖrnen ◽  
Klaus Pressel ◽  
Christoph Hiller ◽  
Dieter Haase ◽  
JÜrgen Weber ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Photoluminescence Excitation ◽  
Excitation Mechanism ◽  
Organic Vapor ◽  
Metal Organic

ABSTRACTWe investigate the excitation mechanism of the characteristic 4f luminescence 3H5 →3H6 of Tm3+ in GaAs by photoluminescence excitation spectroscopy. This luminescence transition is also used to study the incorporation of thulium into the GaAs lattice by angular dependent Zeeman spectroscopy.

scholarly journals Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Wondwosen Metaferia ◽  
Kevin L. Schulte ◽  
John Simon ◽  
Steve Johnston ◽  
Aaron J. Ptak
Keyword(s):  
Gallium Arsenide ◽  
Solar Cells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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