Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy

1999 ◽  
Vol 86 (1) ◽  
pp. 318-324 ◽  
Author(s):  
M. J. Begarney ◽  
L. Li ◽  
B.-K. Han ◽  
D. C. Law ◽  
C. H. Li ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Carbon Tetrachloride ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Carbon Doping ◽  
Etch Pits

Initial stages of gallium arsenide metalorganic vapor phase epitaxy

2016 ◽  
Vol 52 (10) ◽  
pp. 985-989 ◽  
Author(s):  
P. B. Boldyrevskii ◽  
D. O. Filatov ◽  
I. A. Kazantseva ◽  
D. S. Smotrin ◽  
M. V. Revin
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Role of gas‐phase adducts in the growth of gallium arsenide by metalorganic vapor‐phase epitaxy

1993 ◽  
Vol 63 (2) ◽  
pp. 214-215 ◽  
Author(s):  
Douglas F. Foster ◽  
Christopher Glidewell ◽  
David J. Cole‐Hamilton
Keyword(s):  
Gallium Arsenide ◽  
Gas Phase ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Surface accumulation of tin in tin‐doped gallium arsenide grown by low pressure metalorganic vapor phase epitaxy

1984 ◽  
Vol 45 (11) ◽  
pp. 1196-1198 ◽  
Author(s):  
V. S. Sundaram ◽  
A. P. Roth ◽  
D. F. Williams ◽  
R. Yakimova
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Intentional Defect Incorporation in Metalorganic Vapor Phase Epitaxy Indium Gallium Arsenide by Oxygen Doping

1995 ◽  
Vol 378 ◽  
Author(s):  
J. W. Huang ◽  
T. F. Kuech
Keyword(s):  
Gallium Arsenide ◽  
Indium Gallium Arsenide ◽  
Valence Band ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Oxygen Doping ◽  
Constant Energy ◽  
Indium Gallium

AbstractIntentional defect incorporation in metalorganic vapor phase epitaxy (MOVPE) InxGai-xAs was achieved by controlled oxygen doping using diethylaluminum ethoxide (DEALO). DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGai-xAs:Si with 0≤x≤ 0.25. DLTS analysis on a series of InxGa1-xAs:Si:O samples with 0≤x≤ 0.18 showed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. The characteristic deep levels appear to remain at a relatively constant energy with respect to the valence band.

Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy

2000 ◽  
Vol 88 (1) ◽  
pp. 508-512 ◽  
Author(s):  
D. C. Law ◽  
L. Li ◽  
M. J. Begarney ◽  
R. F. Hicks
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Growth Modes

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

1988 ◽  
Vol 53 (14) ◽  
pp. 1317-1319 ◽  
Author(s):  
T. F. Kuech ◽  
M. A. Tischler ◽  
P.‐J. Wang ◽  
G. Scilla ◽  
R. Potemski ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Carbon Doping
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