Depth Profile of the Excitonic Luminescence in Gallium-Nitride Layers

1996 ◽  
Vol 449 ◽  
Author(s):  
H. Siegle ◽  
A. Hoffmann ◽  
L. Eckey ◽  
C. Thomsen ◽  
T. Detchprohm ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Depth Profile ◽  
Vapor Phase ◽  
Blue Shift ◽  
Peak Position ◽  
Hydride Vapor Phase Epitaxy ◽  
Spatially Resolved ◽  
Nitride Layers ◽  
Excitonic Luminescence ◽  
Strong Blue Shift

ABSTRACTWe present results of spatially-resolved photoluminescence and Raman measurements on a 200 μm thick GaN layer grown on sapphire by hydride vapor phase epitaxy. Our microphotoluminescence measurements reveal that the peak position of the excitonic and donoracceptor-pair transitions strongly depends on the distance to the substrate interface. We observed a strong blue shift near the interface and discuss the influence of strain, which we quantified by micro-Raman experiments.

Hydride vapor phase epitaxy for gallium nitride substrate

2019 ◽  
Vol 40 (10) ◽  
pp. 101801 ◽  
Author(s):  
Jun Hu ◽  
Hongyuan Wei ◽  
Shaoyan Yang ◽  
Chengming Li ◽  
Huijie Li ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF05 ◽  
Author(s):  
Min Jeong Shin ◽  
Min Ji Kim ◽  
Hun Soo Jeon ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

2003 ◽  
Vol 83 (4) ◽  
pp. 644-646 ◽  
Author(s):  
B. A. Haskell ◽  
F. Wu ◽  
M. D. Craven ◽  
S. Matsuda ◽  
P. T. Fini ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Defect Reduction ◽  
Lateral Epitaxial Overgrowth

Growth of gallium nitride by hydride vapor-phase epitaxy

1997 ◽  
Vol 178 (1-2) ◽  
pp. 147-156 ◽  
Author(s):  
R.J. Molnar ◽  
W. Götz ◽  
L.T. Romano ◽  
N.M. Johnson
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence

1998 ◽  
Vol 73 (24) ◽  
pp. 3583-3585 ◽  
Author(s):  
E. M. Goldys ◽  
T. Paskova ◽  
I. G. Ivanov ◽  
B. Arnaudov ◽  
B. Monemar
Keyword(s):  
Gallium Nitride ◽  
Direct Observation ◽  
Vapor Phase ◽  
Large Scale ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

scholarly journals Enhancement of InN Luminescence by Introduction of Graphene Interlayer

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 417 ◽  
Author(s):  
Darius Dobrovolskas ◽  
Shingo Arakawa ◽  
Shinichiro Mouri ◽  
Tsutomu Araki ◽  
Yasushi Nanishi ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Lattice Mismatch ◽  
Indium Nitride ◽  
Blue Shift ◽  
Multilayer Graphene ◽  
Spatially Resolved ◽  
Frequency Plasma ◽  
Aln Buffer ◽  
Nitride Layers

Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van der Waals interaction between graphene and nitride layers. The InN epilayers are deposited by radio-frequency plasma-assisted molecular beam epitaxy (MBE), and are characterized by spatially-resolved photoluminescence spectroscopy using confocal microscopy. A small blue shift of the emission band from the band gap evidences a low density of equilibrium carriers, and a high quality of InN on multilayer graphene. A deposition temperature of ~375 °C is determined as optimal. The granularity, which is observed for the InN epilayers deposited on multilayer graphene, is shown to be eliminated, and the emission intensity is further enhanced by the introduction of an aluminum nitride (AlN) buffer layer between graphene and InN.

Atomic Arrangements and Orientations of Aligned Gallium-Nitride Nanoneedles Grown by Using Hydride Vapor Phase Epitaxy

2017 ◽  
Vol 67 (1) ◽  
pp. 30-35
Author(s):  
Ha Young LEE ◽  
Injun JEON ◽  
Ji-yeon NOH ◽  
Kyung-won LIM ◽  
Hyung Soo AHN ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy

2015 ◽  
Vol 421 ◽  
pp. 27-32 ◽  
Author(s):  
F. Réveret ◽  
Y. André ◽  
O. Gourmala ◽  
J. Leymarie ◽  
M. Mihailovic ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Optical Control ◽  
Spatially Resolved ◽  
Selective Area
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