Far‐Infrared Mixing in High‐Purity GaAs

1971 ◽  
Vol 42 (9) ◽  
pp. 3357-3360 ◽  
Author(s):  
B. Y. Lao ◽  
M. M. Litvak
Keyword(s):  
High Purity ◽  
Far Infrared

Far infrared photoconductivity from majority and minority impurities in high purity Si and Ge

1974 ◽  
Vol 15 (8) ◽  
pp. 1403-1408 ◽  
Author(s):  
M.S. Skolnick ◽  
L. Eaves ◽  
R.A. Stradling ◽  
J.C. Portal ◽  
S. Askenazy
Keyword(s):  
High Purity ◽  
Far Infrared

Microwave-assisted far-infrared photoconductivity in high-purity GaAs

2003 ◽  
Author(s):  
Jam Farhoomand ◽  
Robert E. McMurray, Jr. ◽  
David L. Sisson ◽  
Christopher T. Koerber
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Microwave Assisted

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

High-pressure far-infrared magneto-optical and luminescence studies of electronic states of impurity donors-D(X) centres-in high purity GaAs

1991 ◽  
Vol 6 (6) ◽  
pp. 476-482 ◽  
Author(s):  
J E Dmochowski ◽  
R A Stradling ◽  
P D Wang ◽  
S N Holmes ◽  
M Li ◽  
...  
Keyword(s):  
High Pressure ◽  
High Purity ◽  
Electronic States ◽  
Far Infrared

Impact excitation and bottleneck effects in the time-resolved far-infrared photoresponse of high-purity InP

1987 ◽  
Vol 35 (5) ◽  
pp. 2391-2398 ◽  
Author(s):  
J. M. Chamberlain ◽  
A. A. Reeder ◽  
L. M. Claessen ◽  
G. L. J. A. Rikken ◽  
P. Wyder
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impact Excitation ◽  
Time Resolved

FAR‐INFRARED PHOTOCONDUCTIVITY IN HIGH‐PURITY EPITAXIAL GaAs

1968 ◽  
Vol 13 (3) ◽  
pp. 83-84 ◽  
Author(s):  
G. E. Stillman ◽  
C. M. Wolfe ◽  
I. Melngailis ◽  
C. D. Parker ◽  
P. E. Tannenwald ◽  
...  
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Epitaxial Gaas

Far Infrared Magneto-Optical Studies of Free and Bound Carriers in High Purity MBE InAs

1991 ◽  
Vol 65-66 ◽  
pp. 381-388 ◽  
Author(s):  
P.D. Wang ◽  
S.N. Holmes ◽  
R.A. Stradling ◽  
R. Droopad ◽  
Ian T. Ferguson ◽  
...  
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Optical Studies

Chapter 4 Far-Infrared Photoconductivity in High Purity GaAs

1977 ◽  
pp. 169-290 ◽  
Author(s):  
G.E. Stillman ◽  
C.M. Wolfe ◽  
J.O. Dimmock
Keyword(s):  
High Purity ◽  
Far Infrared

Residual Impurities And Transport Properties of High Purity Movpe Gaas

1996 ◽  
Vol 442 ◽  
Author(s):  
G. Steude ◽  
D. M. Hofmann ◽  
M. Drechsler ◽  
B. K. Meyer ◽  
H. Hardtdegen ◽  
...  
Keyword(s):  
High Purity ◽  
Optical Excitation ◽  
Far Infrared ◽  
Excitation Density ◽  
Organic Vapor ◽  
Experimental Parameters ◽  
Metal Organic ◽  
Optically Detected ◽  
Infrared Frequencies ◽  
Neutral Acceptor

AbstractHigh purity GaAs grown by metal organic vapor phase epitaxy (MOVPE) using nitrogen as a carrier gas has been studied by optically detected cyclotron resonance (ODCR) at microwave and far infrared frequencies. Upon variation of the experimental parameters such as sample temperature, optical excitation density and microwave power the residual ionized (donor) and neutral (acceptor) impurity concentrations can be estimated, they are 2×1012 cm−3 and 5×1013 cm−3, respectively. The luminescence results indicate C to be the dominant residual acceptor. The residual donors were identified as S, Se, Sn from the observation of the internal 1s - 3p×105 cm2/Vs.

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