Impact excitation and bottleneck effects in the time-resolved far-infrared photoresponse of high-purity InP

1987 ◽  
Vol 35 (5) ◽  
pp. 2391-2398 ◽  
Author(s):  
J. M. Chamberlain ◽  
A. A. Reeder ◽  
L. M. Claessen ◽  
G. L. J. A. Rikken ◽  
P. Wyder
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impact Excitation ◽  
Time Resolved

Far infrared photoconductivity from majority and minority impurities in high purity Si and Ge

1974 ◽  
Vol 15 (8) ◽  
pp. 1403-1408 ◽  
Author(s):  
M.S. Skolnick ◽  
L. Eaves ◽  
R.A. Stradling ◽  
J.C. Portal ◽  
S. Askenazy
Keyword(s):  
High Purity ◽  
Far Infrared

Event-Locked Time-Resolved Fourier Spectroscopy

1997 ◽  
Vol 51 (8) ◽  
pp. 1106-1112 ◽  
Author(s):  
H. Weidner ◽  
R. E. Peale
Keyword(s):  
Signal To Noise Ratio ◽  
Low Cost ◽  
Michelson Interferometer ◽  
Far Infrared ◽  
Time Base ◽  
The Novel ◽  
Time Resolved ◽  
Mathematical Algorithm ◽  
Scan Time ◽  
Recorded Data

A low-cost method of adding time-resolving capability to commercial Fourier transform spectrometers with a continuously scanning Michelson interferometer has been developed. This method is specifically designed to eliminate noise and artifacts caused by mirror-speed variations in the interferometer. The method exists of two parts: (1) a novel timing scheme for synchronizing the transient events under study and the digitizing of the interferogram and (2) a mathematical algorithm for extracting the spectral information from the recorded data. The novel timing scheme is a modification of the well-known interleaved, or stroboscopic, method. It achieves the same timing accuracy, signal-to-noise ratio, and freedom from artifacts as step-scan time-resolving Fourier spectrometers by locking the sampling of the interferogram to a stable time base rather than to the occurrences of the HeNe fringes. The necessary pathlength-difference information at which samples are taken is obtained from a record of the mirror speed. The resulting interferograms with uneven pathlength-difference spacings are transformed into wavenumber space by least-squares fits of periodic functions. Spectra from the far-infrared to the upper visible at resolutions up to 0.2 cm−1 are used to demonstrate the utility of this method.

Microwave-assisted far-infrared photoconductivity in high-purity GaAs

2003 ◽  
Author(s):  
Jam Farhoomand ◽  
Robert E. McMurray, Jr. ◽  
David L. Sisson ◽  
Christopher T. Koerber
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Microwave Assisted

Time-resolved far-infrared spectroscopy of quantum Hall systems

2002 ◽  
Vol 12 (1-4) ◽  
pp. 144-148 ◽  
Author(s):  
N.G Kalugin ◽  
Yu.B Vasilyev ◽  
S.D Suchalkin ◽  
G Nachtwei ◽  
B.E Sagol ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Quantum Hall ◽  
Far Infrared ◽  
Far Infrared Spectroscopy ◽  
Time Resolved ◽  
Quantum Hall Systems

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

Far‐Infrared Mixing in High‐Purity GaAs

1971 ◽  
Vol 42 (9) ◽  
pp. 3357-3360 ◽  
Author(s):  
B. Y. Lao ◽  
M. M. Litvak
Keyword(s):  
High Purity ◽  
Far Infrared

High-pressure far-infrared magneto-optical and luminescence studies of electronic states of impurity donors-D(X) centres-in high purity GaAs

1991 ◽  
Vol 6 (6) ◽  
pp. 476-482 ◽  
Author(s):  
J E Dmochowski ◽  
R A Stradling ◽  
P D Wang ◽  
S N Holmes ◽  
M Li ◽  
...  
Keyword(s):  
High Pressure ◽  
High Purity ◽  
Electronic States ◽  
Far Infrared

Time resolved far-infrared magneto-optical absorption of a quantum dot array

1998 ◽  
Vol 42 (7-8) ◽  
pp. 1349-1353
Author(s):  
K. Fujii ◽  
T. Yoshizawa ◽  
T. Ohyama ◽  
K. Oto ◽  
S. Takaoka ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Quantum Dot ◽  
Far Infrared ◽  
Time Resolved
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