Microwave-assisted far-infrared photoconductivity in high-purity GaAs

2003 ◽  
Author(s):  
Jam Farhoomand ◽  
Robert E. McMurray, Jr. ◽  
David L. Sisson ◽  
Christopher T. Koerber
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Microwave Assisted

Far infrared photoconductivity from majority and minority impurities in high purity Si and Ge

1974 ◽  
Vol 15 (8) ◽  
pp. 1403-1408 ◽  
Author(s):  
M.S. Skolnick ◽  
L. Eaves ◽  
R.A. Stradling ◽  
J.C. Portal ◽  
S. Askenazy
Keyword(s):  
High Purity ◽  
Far Infrared

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

Far‐Infrared Mixing in High‐Purity GaAs

1971 ◽  
Vol 42 (9) ◽  
pp. 3357-3360 ◽  
Author(s):  
B. Y. Lao ◽  
M. M. Litvak
Keyword(s):  
High Purity ◽  
Far Infrared

High-pressure far-infrared magneto-optical and luminescence studies of electronic states of impurity donors-D(X) centres-in high purity GaAs

1991 ◽  
Vol 6 (6) ◽  
pp. 476-482 ◽  
Author(s):  
J E Dmochowski ◽  
R A Stradling ◽  
P D Wang ◽  
S N Holmes ◽  
M Li ◽  
...  
Keyword(s):  
High Pressure ◽  
High Purity ◽  
Electronic States ◽  
Far Infrared

Microwave assisted axial ligand substitution of titanium phthalocyanines

2005 ◽  
Vol 09 (12) ◽  
pp. 880-883 ◽  
Author(s):  
Suzanne E. Maree
Keyword(s):  
Microwave Irradiation ◽  
High Purity ◽  
Ligand Substitution ◽  
Axial Ligand ◽  
High Yield ◽  
Microwave Assisted ◽  
The Times

The synthesis of various axially substituted titanium phthalocyanines in high yield using microwave irradiation without an added solvent is reported. The times of reaction, as expected, are short and generally less than 10 minutes. The products were obtained in high purity after chromatography.

Impact excitation and bottleneck effects in the time-resolved far-infrared photoresponse of high-purity InP

1987 ◽  
Vol 35 (5) ◽  
pp. 2391-2398 ◽  
Author(s):  
J. M. Chamberlain ◽  
A. A. Reeder ◽  
L. M. Claessen ◽  
G. L. J. A. Rikken ◽  
P. Wyder
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impact Excitation ◽  
Time Resolved
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