Residual Impurities And Transport Properties of High Purity Movpe Gaas

1996 ◽  
Vol 442 ◽  
Author(s):  
G. Steude ◽  
D. M. Hofmann ◽  
M. Drechsler ◽  
B. K. Meyer ◽  
H. Hardtdegen ◽  
...  
Keyword(s):  
High Purity ◽  
Optical Excitation ◽  
Far Infrared ◽  
Excitation Density ◽  
Organic Vapor ◽  
Experimental Parameters ◽  
Metal Organic ◽  
Optically Detected ◽  
Infrared Frequencies ◽  
Neutral Acceptor

AbstractHigh purity GaAs grown by metal organic vapor phase epitaxy (MOVPE) using nitrogen as a carrier gas has been studied by optically detected cyclotron resonance (ODCR) at microwave and far infrared frequencies. Upon variation of the experimental parameters such as sample temperature, optical excitation density and microwave power the residual ionized (donor) and neutral (acceptor) impurity concentrations can be estimated, they are 2×1012 cm−3 and 5×1013 cm−3, respectively. The luminescence results indicate C to be the dominant residual acceptor. The residual donors were identified as S, Se, Sn from the observation of the internal 1s - 3p×105 cm2/Vs.

scholarly journals Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00·1)

2001 ◽  
Vol 16 (5) ◽  
pp. 1358-1362 ◽  
Author(s):  
W. I. Park ◽  
S-J. An ◽  
Gyu-Chul Yi ◽  
Hyun M. Jang
Keyword(s):  
Vapor Phase ◽  
Deep Level ◽  
Stimulated Emission ◽  
Zno Films ◽  
High Quality ◽  
Organic Vapor ◽  
Good Crystallinity ◽  
Experimental Parameters ◽  
Metal Organic ◽  
Excitonic Emission

High-quality ZnO thin films were grown epitaxially at 250–550 °C Al2O3(00·1) substrates using low-pressure metalorganic vapor phase epitaxy. The reactants for the growth were diethylzinc and oxygen. Growth temperature, one of the important experimental parameters for epitaxial layers, was optimized. The films grown at 500 °C exhibited good crystallinity and strong ultraviolet absorption and emission. Photoluminescence spectra of the films showed a dominant excitonic emission with a weak deep level emission. More importantly, a strong stimulated emission peak was observed even at room temperature.

FAR-INFRARED MAGNETO-OPTICAL STUDY ON ZnSe LAYERS

1994 ◽  
Vol 08 (11) ◽  
pp. 653-665 ◽  
Author(s):  
H. NAKATA ◽  
R. KOMEDA ◽  
T. OHYAMA ◽  
E. OTSUKA
Keyword(s):  
Molecular Beam ◽  
Far Infrared ◽  
Peak Position ◽  
Optical Study ◽  
Organic Vapor ◽  
Pinning Effect ◽  
Metal Organic ◽  
P Type ◽  
Main Absorption Peak ◽  
Second Order Perturbation Theory

We report on a study of the far-infrared (FIR) magneto-absorption of ZnSe layers epitaxially grown on GaAs by metal-organic vapor-phase epitaxy (MOVPE) or molecular-beam epitaxy (MBE). The Zeeman absorption of the residual donors is observed in undoped and p -type ZnSe layers. A main absorption peak is assigned to a 1s to 2p+ transition of an electron bound to a Cl donor. Polaron pinning effect is included to explain the peak position within the framework of Wigner–Brillouin second order perturbation theory.

Semiconductors

2018 ◽  
Author(s):  
L. Solymar ◽  
D. Walsh ◽  
R. R. A. Syms
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Vapour Deposition ◽  
Energy Levels ◽  
Chemical Vapour ◽  
Optical Excitation ◽  
Organic Chemical ◽  
Metal Organic ◽  
Mathematical Relations ◽  
Semiconductor Properties

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

2003 ◽  
Vol 32 (7) ◽  
pp. 656-660 ◽  
Author(s):  
C. D. Maxey ◽  
J. P. Camplin ◽  
I. T. Guilfoy ◽  
J. Gardner ◽  
R. A. Lockett ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Organic Vapor ◽  
Metal Organic

Kinetic Analysis of InN Selective Area Metal–Organic Vapor Phase Epitaxy

2008 ◽  
Vol 1 ◽  
pp. 071102 ◽  
Author(s):  
Tomonari Shioda ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Kinetic Analysis ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic
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