FAR‐INFRARED PHOTOCONDUCTIVITY IN HIGH‐PURITY EPITAXIAL GaAs

G. E. Stillman; C. M. Wolfe; I. Melngailis; C. D. Parker; P. E. Tannenwald; J. O. Dimmock

doi:10.1063/1.1652525

FAR‐INFRARED PHOTOCONDUCTIVITY IN HIGH‐PURITY EPITAXIAL GaAs

Applied Physics Letters ◽

10.1063/1.1652525 ◽

1968 ◽

Vol 13 (3) ◽

pp. 83-84 ◽

Cited By ~ 36

Author(s):

G. E. Stillman ◽

C. M. Wolfe ◽

I. Melngailis ◽

C. D. Parker ◽

P. E. Tannenwald ◽

...

Keyword(s):

High Purity ◽

Far Infrared ◽

Epitaxial Gaas

Download Full-text

Far infrared photoconductivity in high purity epitaxial GaAs

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1968.16496 ◽

1968 ◽

Vol 15 (9) ◽

pp. 692-692

Author(s):

G.E. Stillman ◽

C.M. Wolfe ◽

I. Melngailis ◽

C.D. Par ◽

P.E. Tannerwald ◽

...

Keyword(s):

High Purity ◽

Far Infrared ◽

Epitaxial Gaas

Download Full-text

Far infrared photoconductivity from majority and minority impurities in high purity Si and Ge

Solid State Communications ◽

10.1016/0038-1098(74)91390-8 ◽

1974 ◽

Vol 15 (8) ◽

pp. 1403-1408 ◽

Cited By ~ 79

Author(s):

M.S. Skolnick ◽

L. Eaves ◽

R.A. Stradling ◽

J.C. Portal ◽

S. Askenazy

Keyword(s):

High Purity ◽

Far Infrared

Download Full-text

Identification of residual donors in high-purity epitaxial GaAs with the use of magneto-optical spectroscopy

Physical Review B ◽

10.1103/physrevb.28.3300 ◽

1983 ◽

Vol 28 (6) ◽

pp. 3300-3305 ◽

Cited By ~ 29

Author(s):

D. C. Reynolds ◽

K. K. Bajaj ◽

C. W. Litton ◽

E. B. Smith

Keyword(s):

Optical Spectroscopy ◽

High Purity ◽

Epitaxial Gaas

Download Full-text

Donor Magnetospectroscopy in high purity epitaxial GaAs

Solid State Communications ◽

10.1016/0038-1098(69)90823-0 ◽

1969 ◽

Vol 7 (11) ◽

pp. xvi-xvii

Author(s):

G.E. Stillman ◽

C.M. Wolfe ◽

J.O. Dimmock

Keyword(s):

High Purity ◽

Epitaxial Gaas

Download Full-text

Microwave-assisted far-infrared photoconductivity in high-purity GaAs

10.1117/12.510383 ◽

2003 ◽

Author(s):

Jam Farhoomand ◽

Robert E. McMurray, Jr. ◽

David L. Sisson ◽

Christopher T. Koerber

Keyword(s):

High Purity ◽

Far Infrared ◽

Microwave Assisted

Download Full-text

Germanium Far Infrared Blocked Impurity Band Detectors

MRS Proceedings ◽

10.1557/proc-484-215 ◽

1997 ◽

Vol 484 ◽

Cited By ~ 3

Author(s):

C. S. Olsen ◽

J. W. Beeman ◽

W. L. Hansen ◽

E. E. Hallerab

Keyword(s):

High Purity ◽

Far Infrared ◽

Impurity Band ◽

Infrared Detection ◽

Long Wavelength ◽

Current Voltage ◽

Heavily Doped ◽

Absorbing Layer ◽

Blocked Impurity Band Detectors ◽

Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

Download Full-text