Mobility and Infrared Absorption in n‐Type Gallium Arsenide

S. Perkowitz

doi:10.1063/1.1658266

Mobility and Infrared Absorption in n‐Type Gallium Arsenide

Journal of Applied Physics ◽

10.1063/1.1658266 ◽

1969 ◽

Vol 40 (9) ◽

pp. 3751-3754 ◽

Cited By ~ 20

Author(s):

S. Perkowitz

Keyword(s):

Gallium Arsenide ◽

Infrared Absorption

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Infrared absorption in gallium arsenide

Infrared Physics ◽

10.1016/0020-0891(61)90014-8 ◽

1961 ◽

Vol 1 (2) ◽

pp. 111-115 ◽

Cited By ~ 78

Author(s):

T.S. Moss ◽

T.D.F. Hawkins

Keyword(s):

Gallium Arsenide ◽

Infrared Absorption

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Infrared absorption of mixed silicon isotope pairs in gallium arsenide

Journal of Applied Physics ◽

10.1063/1.1663362 ◽

1974 ◽

Vol 45 (3) ◽

pp. 1009-1012 ◽

Cited By ~ 24

Author(s):

P. C. Leung ◽

J. Fredrickson ◽

W. G. Spitzer ◽

A. Kahan ◽

L. Bouthillette

Keyword(s):

Gallium Arsenide ◽

Infrared Absorption ◽

Silicon Isotope

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Annealing behavior of deep‐level defects in semi‐insulating gallium arsenide studied by photoluminescence, infrared absorption, and resistivity mapping

Journal of Applied Physics ◽

10.1063/1.348405 ◽

1991 ◽

Vol 69 (8) ◽

pp. 4310-4317 ◽

Cited By ~ 27

Author(s):

M. Müllenborn ◽

H. Ch. Alt ◽

A. Heberle

Keyword(s):

Gallium Arsenide ◽

Infrared Absorption ◽

Deep Level ◽

Annealing Behavior

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Infrared Absorption and Electron Effective Mass inn-Type Gallium Arsenide

Physical Review ◽

10.1103/physrev.114.59 ◽

1959 ◽

Vol 114 (1) ◽

pp. 59-63 ◽

Cited By ~ 371

Author(s):

W. G. Spitzer ◽

J. M. Whelan

Keyword(s):

Gallium Arsenide ◽

Effective Mass ◽

Infrared Absorption ◽

Electron Effective Mass

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Infrared absorption by point defects in gallium arsenide

Journal of Physics C Solid State Physics ◽

10.1088/0022-3719/5/14/013 ◽

1972 ◽

Vol 5 (14) ◽

pp. 1883-1892 ◽

Cited By ~ 7

Author(s):

A Grimm

Keyword(s):

Gallium Arsenide ◽

Point Defects ◽

Infrared Absorption

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Infrared absorption spectroscopy of a carbon-oxygen complex in gallium arsenide

physica status solidi (b) ◽

10.1002/pssb.201248350 ◽

2012 ◽

Vol 250 (2) ◽

pp. 324-328 ◽

Cited By ~ 2

Author(s):

H. Ch. Alt ◽

A. Kersch ◽

H. E. Wagner

Keyword(s):

Gallium Arsenide ◽

Absorption Spectroscopy ◽

Infrared Absorption ◽

Infrared Absorption Spectroscopy ◽

Oxygen Complex

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Calibration of the infrared absorption due to silicon in gallium arsenide

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/18/8/021 ◽

1985 ◽

Vol 18 (8) ◽

pp. 1575-1583 ◽

Cited By ~ 29

Author(s):

J Woodhead ◽

R C Newman ◽

A K Tipping ◽

J B Cleggs ◽

J A Roberts ◽

...

Keyword(s):

Gallium Arsenide ◽

Infrared Absorption

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ORTHO AND PARA STATES OF INTERSTITIAL H2 IN SILICON AND GALLIUM ARSENIDE

Modern Physics Letters B ◽

10.1142/s0217984904007050 ◽

2004 ◽

Vol 18 (11) ◽

pp. 453-466 ◽

Cited By ~ 2

Author(s):

E. V. LAVROV

Keyword(s):

Gallium Arsenide ◽

Raman Scattering ◽

Band Gap ◽

Raman Spectra ◽

Spin State ◽

Infrared Absorption ◽

Nuclear Spin ◽

Hydrogen Molecule ◽

Room Temperature ◽

Absorption Studies

A survey of recent Raman scattering studies on the interstitial hydrogen molecule ( H 2) in Si and GaAs is presented. It is shown that properties of H 2 strongly depend on the nuclear spin state I. In either material, para- H 2 (I=0) is unstable against irradiation with band gap light. In the case of Si, para- H 2 also preferentially disappears from the Raman spectra in the course of storage at room temperature in the dark. Possible explanations for this surprising behavior are discussed and compared with the latest infrared absorption studies.

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