Infrared absorption of mixed silicon isotope pairs in gallium arsenide

1974 ◽  
Vol 45 (3) ◽  
pp. 1009-1012 ◽  
Author(s):  
P. C. Leung ◽  
J. Fredrickson ◽  
W. G. Spitzer ◽  
A. Kahan ◽  
L. Bouthillette
Keyword(s):  
Gallium Arsenide ◽  
Infrared Absorption ◽  
Silicon Isotope

Infrared absorption in gallium arsenide

1961 ◽  
Vol 1 (2) ◽  
pp. 111-115 ◽  
Author(s):  
T.S. Moss ◽  
T.D.F. Hawkins
Keyword(s):  
Gallium Arsenide ◽  
Infrared Absorption

Calibration of the infrared absorption due to silicon in gallium arsenide

1985 ◽  
Vol 18 (8) ◽  
pp. 1575-1583 ◽  
Author(s):  
J Woodhead ◽  
R C Newman ◽  
A K Tipping ◽  
J B Cleggs ◽  
J A Roberts ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Infrared Absorption

ORTHO AND PARA STATES OF INTERSTITIAL H2 IN SILICON AND GALLIUM ARSENIDE

2004 ◽  
Vol 18 (11) ◽  
pp. 453-466 ◽  
Author(s):  
E. V. LAVROV
Keyword(s):  
Gallium Arsenide ◽  
Raman Scattering ◽  
Band Gap ◽  
Raman Spectra ◽  
Spin State ◽  
Infrared Absorption ◽  
Nuclear Spin ◽  
Hydrogen Molecule ◽  
Room Temperature ◽  
Absorption Studies

A survey of recent Raman scattering studies on the interstitial hydrogen molecule ( H 2) in Si and GaAs is presented. It is shown that properties of H 2 strongly depend on the nuclear spin state I. In either material, para- H 2 (I=0) is unstable against irradiation with band gap light. In the case of Si, para- H 2 also preferentially disappears from the Raman spectra in the course of storage at room temperature in the dark. Possible explanations for this surprising behavior are discussed and compared with the latest infrared absorption studies.

Infrared absorption in gallium arsenide, produced by deep defect levels

1974 ◽  
Vol 17 (10) ◽  
pp. 1434-1436
Author(s):  
V. N. Brudnyi ◽  
E. Yu. Brailovskii ◽  
M. A. Krivov ◽  
V. P. Red'ko
Keyword(s):  
Gallium Arsenide ◽  
Infrared Absorption ◽  
Deep Defect ◽  
Defect Levels
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