Infrared absorption in gallium arsenide, produced by deep defect levels

1974 ◽  
Vol 17 (10) ◽  
pp. 1434-1436
Author(s):  
V. N. Brudnyi ◽  
E. Yu. Brailovskii ◽  
M. A. Krivov ◽  
V. P. Red'ko
Keyword(s):  
Gallium Arsenide ◽  
Infrared Absorption ◽  
Deep Defect ◽  
Defect Levels

Infrared absorption in gallium arsenide

1961 ◽  
Vol 1 (2) ◽  
pp. 111-115 ◽  
Author(s):  
T.S. Moss ◽  
T.D.F. Hawkins
Keyword(s):  
Gallium Arsenide ◽  
Infrared Absorption

Infrared absorption of mixed silicon isotope pairs in gallium arsenide

1974 ◽  
Vol 45 (3) ◽  
pp. 1009-1012 ◽  
Author(s):  
P. C. Leung ◽  
J. Fredrickson ◽  
W. G. Spitzer ◽  
A. Kahan ◽  
L. Bouthillette
Keyword(s):  
Gallium Arsenide ◽  
Infrared Absorption ◽  
Silicon Isotope

Deep Defect Levels in Plastically Deformed GaAs

1986 ◽  
Vol 25 (Part 1, No. 4) ◽  
pp. 533-537 ◽  
Author(s):  
Masashi Suezawa ◽  
Koji Sumino
Keyword(s):  
Deep Defect ◽  
Defect Levels

Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy

1994 ◽  
Vol 339 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel
Keyword(s):  
Transition Metal ◽  
Single Crystals ◽  
Admittance Spectroscopy ◽  
Donor Atom ◽  
Deep Defect ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Defect Levels ◽  
Type Conduction

ABSTRACTOptical admittance spectroscopy is a technique for measuring the conductance and capacitance of a junction under illumination as a function of the wavelength of the light and the frequency of the measuring AC signal. This technique has been applied to characterize deep defect levels in 6H-SiC:N. Nitrogen is a donor atom in 6H-SiC which substitutes for carbon in three inequivalent sites (h, k1, k2). giving rise to n-type conduction. Deep defect levels attributable to transition metal impurities have also been identified in 6H-SiC:N. We have examined persistent photoconductance in this material by optical admittance spectroscopy.

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