ChemInform Abstract: INFRARED ABSORPTION AND MICROSTRUCTURE OF LITHIUM-SATURATED SILICON-DOPED GALLIUM ARSENIDE

R. T. CHEN; W. G. SPITZER

doi:10.1002/chin.198045007

ChemInform Abstract: INFRARED ABSORPTION AND MICROSTRUCTURE OF LITHIUM-SATURATED SILICON-DOPED GALLIUM ARSENIDE

Chemischer Informationsdienst ◽

10.1002/chin.198045007 ◽

1980 ◽

Vol 11 (45) ◽

Author(s):

R. T. CHEN ◽

W. G. SPITZER

Keyword(s):

Gallium Arsenide ◽

Infrared Absorption ◽

Silicon Doped

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Simultaneously Mapping of In-Depth Thermal Diffusivity and Effective Infrared Absorption Coefficient of Silicon-Doped Gallium Arsenide Wafer Using Lock-in Thermography

Analytical Letters ◽

10.1080/00032719.2017.1405966 ◽

2018 ◽

Vol 52 (1) ◽

pp. 93-101

Author(s):

M. Pawlak ◽

K. Ramza ◽

M. Streza

Keyword(s):

Gallium Arsenide ◽

Thermal Diffusivity ◽

Absorption Coefficient ◽

Infrared Absorption ◽

Silicon Doped ◽

Lock In

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Infrared absorption in gallium arsenide

Infrared Physics ◽

10.1016/0020-0891(61)90014-8 ◽

1961 ◽

Vol 1 (2) ◽

pp. 111-115 ◽

Cited By ~ 78

Author(s):

T.S. Moss ◽

T.D.F. Hawkins

Keyword(s):

Gallium Arsenide ◽

Infrared Absorption

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Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide

Philosophical Magazine B ◽

10.1080/13642810208222942 ◽

2002 ◽

Vol 82 (17) ◽

pp. 1809-1815

Author(s):

A. C. Towner ◽

M. Nathwani ◽

A. S. Saleh ◽

D. P. van der Werf ◽

P. Rice-Evans

Keyword(s):

Gallium Arsenide ◽

Positron Annihilation ◽

Positron Annihilation Study ◽

Silicon Doped

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Infrared absorption of mixed silicon isotope pairs in gallium arsenide

Journal of Applied Physics ◽

10.1063/1.1663362 ◽

1974 ◽

Vol 45 (3) ◽

pp. 1009-1012 ◽

Cited By ~ 24

Author(s):

P. C. Leung ◽

J. Fredrickson ◽

W. G. Spitzer ◽

A. Kahan ◽

L. Bouthillette

Keyword(s):

Gallium Arsenide ◽

Infrared Absorption ◽

Silicon Isotope

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Evidence of pre-thermalization trapping of positrons in neutron-irradiated silicon-doped gallium arsenide

Philosophical Magazine B ◽

10.1080/13642819108205547 ◽

1991 ◽

Vol 63 (4) ◽

pp. 923-930 ◽

Cited By ~ 4

Author(s):

S. C. Creamer ◽

P. C. Rice-Evans ◽

G. A. Gledhill ◽

J. D. Collins

Keyword(s):

Gallium Arsenide ◽

Silicon Doped

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Diffusion and electrical properties of silicon‐doped gallium arsenide

Journal of Applied Physics ◽

10.1063/1.335253 ◽

1985 ◽

Vol 57 (12) ◽

pp. 5181-5187 ◽

Cited By ~ 89

Author(s):

Mark E. Greiner ◽

James F. Gibbons

Keyword(s):

Gallium Arsenide ◽

Electrical Properties ◽

Silicon Doped

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Annealing behavior of deep‐level defects in semi‐insulating gallium arsenide studied by photoluminescence, infrared absorption, and resistivity mapping

Journal of Applied Physics ◽

10.1063/1.348405 ◽

1991 ◽

Vol 69 (8) ◽

pp. 4310-4317 ◽

Cited By ~ 27

Author(s):

M. Müllenborn ◽

H. Ch. Alt ◽

A. Heberle

Keyword(s):

Gallium Arsenide ◽

Infrared Absorption ◽

Deep Level ◽

Annealing Behavior

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Dislocation-free silicon-doped gallium arsenide grown by LEC procedure

Journal of Crystal Growth ◽

10.1016/0022-0248(83)90234-8 ◽

1983 ◽

Vol 63 (2) ◽

pp. 415-418 ◽

Cited By ~ 27

Author(s):

R. Fornari ◽

C. Paorici ◽

L. Zanotti ◽

G. Zuccalli

Keyword(s):

Gallium Arsenide ◽

Free Silicon ◽

Silicon Doped

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Infrared Absorption and Electron Effective Mass inn-Type Gallium Arsenide

Physical Review ◽

10.1103/physrev.114.59 ◽

1959 ◽

Vol 114 (1) ◽

pp. 59-63 ◽

Cited By ~ 371

Author(s):

W. G. Spitzer ◽

J. M. Whelan

Keyword(s):

Gallium Arsenide ◽

Effective Mass ◽

Infrared Absorption ◽

Electron Effective Mass

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Compensation mechanism in silicon-doped gallium arsenide nanowires

Applied Physics Letters ◽

10.1063/1.3517254 ◽

2010 ◽

Vol 97 (22) ◽

pp. 223103 ◽

Cited By ~ 32

Author(s):

B. Ketterer ◽

E. Mikheev ◽

E. Uccelli ◽

A. Fontcuberta i Morral

Keyword(s):

Gallium Arsenide ◽

Compensation Mechanism ◽

Silicon Doped

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