scholarly journals Erratum: Trap structure of pyrolytic Al2O3 in MOS capacitors

1973 ◽  
Vol 22 (12) ◽  
pp. 688-688 ◽  
Author(s):  
E. Harari ◽  
B.S.H. Royce
Keyword(s):  
Mos Capacitors ◽  
Trap Structure

Trap structure of pyrolytic Al2O3in MOS capacitors

1973 ◽  
Vol 22 (3) ◽  
pp. 106-107 ◽  
Author(s):  
E. Harari ◽  
B.S.H. Royce
Keyword(s):  
Mos Capacitors ◽  
Trap Structure

The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors

2002 ◽  
Vol 716 ◽  
Author(s):  
You-Seok Suh ◽  
Greg Heuss ◽  
Jae-Hoon Lee ◽  
Veena Misra
Keyword(s):  
Structural Properties ◽  
Electron Spectroscopy ◽  
Oxygen Diffusion ◽  
Gate Dielectric ◽  
Barrier Properties ◽  
Reaction Rates ◽  
Cross Sectional ◽  
Mos Capacitors ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.

Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors

2021 ◽  
Vol 129 (19) ◽  
pp. 195705
Author(s):  
Christopher J. Klingshirn ◽  
Asanka Jayawardena ◽  
Sarit Dhar ◽  
Rahul P. Ramamurthy ◽  
Dallas Morisette ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Mos Capacitors ◽  
Analytical Electron ◽  
Interface Structures

Correction to "A comparative analysis of substrate current generation mechanisms in tunneling mos capacitors"

2002 ◽  
Vol 49 (10) ◽  
pp. 1844-1844
Author(s):  
P. Palestri ◽  
A.D. Serra ◽  
L. Selmi ◽  
M. Pavesi ◽  
P.L. Rigolli ◽  
...  
Keyword(s):  
Comparative Analysis ◽  
Current Generation ◽  
Mos Capacitors ◽  
Substrate Current ◽  
Generation Mechanisms

Tetragonal ZrO2-Gated Ge MOS Capacitors Fabricated on Si Substrate

2019 ◽  
Vol 28 (5) ◽  
pp. 153-160 ◽  
Author(s):  
Min-Lin Wu ◽  
Lun-Lun Chen ◽  
Jia-Rong Wu ◽  
Yung-Hsien Wu
Keyword(s):  
Tetragonal Zro2 ◽  
Si Substrate ◽  
Mos Capacitors
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