Correction to "A comparative analysis of substrate current generation mechanisms in tunneling mos capacitors"

2002 ◽  
Vol 49 (10) ◽  
pp. 1844-1844
Author(s):  
P. Palestri ◽  
A.D. Serra ◽  
L. Selmi ◽  
M. Pavesi ◽  
P.L. Rigolli ◽  
...  
Keyword(s):  
Comparative Analysis ◽  
Current Generation ◽  
Mos Capacitors ◽  
Substrate Current ◽  
Generation Mechanisms

A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors

2002 ◽  
Vol 49 (8) ◽  
pp. 1427-1435 ◽  
Author(s):  
P. Palestri ◽  
A.D. Serra ◽  
L. Selmi ◽  
M. Pavesi ◽  
P.L. Rigolli ◽  
...  
Keyword(s):  
Comparative Analysis ◽  
Current Generation ◽  
Mos Capacitors ◽  
Substrate Current ◽  
Generation Mechanisms

Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation

1988 ◽  
Vol 86 (1-4) ◽  
pp. 849-858 ◽  
Author(s):  
R.E. DeWames ◽  
G.M. Williams ◽  
J.G. Pasko ◽  
A.H.B. Vanderwyck
Keyword(s):  
Ion Implantation ◽  
Band Gap ◽  
Current Generation ◽  
Small Band ◽  
Generation Mechanisms

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

2020 ◽  
Vol 1004 ◽  
pp. 635-641
Author(s):  
Peyush Pande ◽  
Sima Dimitrijev ◽  
Daniel Haasmann ◽  
Hamid Amini Moghadam ◽  
Philip Tanner ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Comparative Analysis ◽  
Direct Measurement ◽  
Measurement Technique ◽  
Measurement Method ◽  
Gate Oxide ◽  
Interface Traps ◽  
Gate Oxides ◽  
Mos Capacitors ◽  
Direct Measurement Method

This paper presents a comparative analysis of the electrically active near-interface traps, energetically located above the bottom of conduction band. Two different samples of N-type SiC MOS capacitors were fabricated with gate oxides grown in (1) dry O2 (as-grown) and (2) dry O2 annealed in nitric oxide (nitride). Measurements performed by the direct measurement method revealed that the traps located further away from the SiO2/SiC interface are removed by nitridation. A spatially localized behaviour of NITs is observed only in the nitrided gate oxide but not in the as-grown gate oxide.

scholarly journals Consumer-grade storage comparative analysis in the context of digitalization of the agro-industrial complex

2021 ◽  
Vol 937 (3) ◽  
pp. 032079
Author(s):  
Vladimir Opolskii ◽  
Maria Stupina
Keyword(s):  
Comparative Analysis ◽  
User Experience ◽  
Cloud Storage ◽  
Performance Metrics ◽  
Industrial Complex ◽  
Current Generation ◽  
Storage Devices ◽  
Processing Data ◽  
Great Solution ◽  
Storage Technologies

Abstract Since the importance of storing information has risen in early 2010’s, devices being used by people are continuing to change, showing the trend of transitioning on to the faster and more advanced storage technologies. Most of unexperienced users are unaware of benefits of current generation drives, such as various types of SSDs, and continue using legacy disks, unwillingly crippling their user experience. To determine the popularity of different storage devices, a questionnaire has been conducted. In this article testing of currently present consumer-grade storage devices mostly with use of software called AS SSD Benchmark, can be found. Also, comparison of the most crucial performance metrics has been conducted during the study, which lead to a conclusion that modern storage technologies such as SSDs and Cloud storage, provide a great solution to a problem of processing data, as well as storing big volumes of it.

Transient substrate current generation and device degradation in CMOS circuits at 77K

1985 ◽  
Author(s):  
D.-H. Ju ◽  
R.K. Reich ◽  
J.W. Schrankler ◽  
M.S. Holt ◽  
G.D. Kirchner
Keyword(s):  
Cmos Circuits ◽  
Current Generation ◽  
Substrate Current
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